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STP35N60M2-EP

STP35N60M2-EP

Product Category

The STP35N60M2-EP belongs to the category of power MOSFETs.

Basic Information Overview

  • Use: The STP35N60M2-EP is used as a power transistor in various electronic circuits and applications.
  • Characteristics: It is known for its high voltage capability, low input capacitance, and fast switching speed.
  • Package: The STP35N60M2-EP is typically available in a TO-220 package.
  • Essence: This MOSFET is essential for controlling high-power loads in electronic devices.
  • Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for production runs.

Specifications

The specifications of the STP35N60M2-EP include: - Voltage Rating: 600V - Current Rating: 35A - RDS(ON): 0.09Ω - Package Type: TO-220

Detailed Pin Configuration

The pin configuration of the STP35N60M2-EP includes the gate, drain, and source pins, which are standard for a TO-220 package.

Functional Features

  • High Voltage Capability: Allows for use in high-power applications.
  • Low Input Capacitance: Enables fast switching speeds.
  • Fast Switching Speed: Facilitates efficient control of power flow.

Advantages and Disadvantages

Advantages: 1. High voltage capability suitable for demanding applications. 2. Low input capacitance for improved efficiency. 3. Fast switching speed for precise power control.

Disadvantages: 1. Higher cost compared to lower-rated MOSFETs. 2. May require additional heat dissipation measures in high-power applications.

Working Principles

The STP35N60M2-EP operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STP35N60M2-EP is widely used in various applications, including: - Switched-Mode Power Supplies (SMPS) - Motor Control Circuits - Inverters and Converters - Audio Amplifiers

Detailed and Complete Alternative Models

Some alternative models to the STP35N60M2-EP include: - IRF840 - FDP8878 - IXFN38N100

In conclusion, the STP35N60M2-EP is a high-voltage power MOSFET with fast switching characteristics, making it suitable for a wide range of electronic applications requiring efficient power control.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STP35N60M2-EP v technických řešeních

  1. What is the maximum drain-source voltage for STP35N60M2-EP?

    • The maximum drain-source voltage for STP35N60M2-EP is 600V.
  2. What is the continuous drain current rating for STP35N60M2-EP?

    • The continuous drain current rating for STP35N60M2-EP is 35A.
  3. What is the typical on-resistance for STP35N60M2-EP?

    • The typical on-resistance for STP35N60M2-EP is 0.08 ohms.
  4. What is the gate threshold voltage for STP35N60M2-EP?

    • The gate threshold voltage for STP35N60M2-EP is typically 3V.
  5. What is the power dissipation of STP35N60M2-EP?

    • The power dissipation of STP35N60M2-EP is 300W.
  6. What are the recommended operating temperature range for STP35N60M2-EP?

    • The recommended operating temperature range for STP35N60M2-EP is -55°C to 150°C.
  7. Is STP35N60M2-EP suitable for high-frequency switching applications?

    • Yes, STP35N60M2-EP is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
  8. Can STP35N60M2-EP be used in automotive applications?

    • Yes, STP35N60M2-EP is designed for automotive applications and meets the necessary standards and requirements.
  9. What are the typical applications for STP35N60M2-EP?

    • Typical applications for STP35N60M2-EP include motor control, power supplies, inverters, and automotive systems.
  10. Does STP35N60M2-EP have built-in protection features?

    • STP35N60M2-EP includes built-in protection features such as overcurrent protection and thermal shutdown to ensure reliable operation in various technical solutions.