STI23NM60ND

Introduction

The STI23NM60ND is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

Category: Power MOSFET
Use: Used for power switching applications in electronic circuits
Characteristics: High voltage capability, low input capacitance, fast switching speed
Package: TO-220FP
Essence: Efficient power management and control
Packaging/Quantity: Typically packaged in reels or tubes containing multiple units

Specifications

Voltage Rating: 600V
Current Rating: 23A
On-state Resistance: 0.19Ω
Gate Threshold Voltage: 3V
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STI23NM60ND features a standard TO-220FP pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

High voltage capability allows for use in various power applications
Low input capacitance enables fast switching speed
Enhanced thermal performance for improved reliability

Advantages and Disadvantages

Advantages

High voltage rating suitable for diverse applications
Low on-state resistance for efficient power management
Fast switching speed for improved performance

Disadvantages

Higher cost compared to some alternative models
Limited availability from certain suppliers

Working Principles

The STI23NM60ND operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the device switches on, allowing current to flow between the drain and source terminals.

Detailed Application Field Plans

The STI23NM60ND finds extensive use in various applications, including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the STI23NM60ND include: - IRF840 - FQP30N06L - IRL540

In conclusion, the STI23NM60ND power MOSFET offers high voltage capability, low input capacitance, and fast switching speed, making it suitable for a wide range of power switching applications in electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STI23NM60ND v technických řešeních

What is STI23NM60ND?
- STI23NM60ND is a high voltage N-channel Power MOSFET designed for applications such as switching power supplies, motor control, and lighting.
What is the maximum drain-source voltage of STI23NM60ND?
- The maximum drain-source voltage of STI23NM60ND is 600V.
What is the typical on-state resistance of STI23NM60ND?
- The typical on-state resistance of STI23NM60ND is 0.19 ohms.
What are the typical applications of STI23NM60ND?
- STI23NM60ND is commonly used in applications such as AC-DC and DC-DC converters, motor drives, and electronic lamp ballasts.
What is the maximum continuous drain current of STI23NM60ND?
- The maximum continuous drain current of STI23NM60ND is 23A.
What are the thermal characteristics of STI23NM60ND?
- STI23NM60ND has a low thermal resistance and is designed to efficiently dissipate heat in high-power applications.
Is STI23NM60ND suitable for high-frequency switching applications?
- Yes, STI23NM60ND is suitable for high-frequency switching due to its fast switching speed and low gate charge.
Does STI23NM60ND have built-in protection features?
- STI23NM60ND offers built-in protection against overcurrent, overvoltage, and thermal overload, making it reliable in demanding environments.
What are the recommended operating conditions for STI23NM60ND?
- STI23NM60ND operates within a specified temperature range and voltage limits, making it important to adhere to these conditions for optimal performance.
Where can I find detailed technical specifications and application notes for STI23NM60ND?
- Detailed technical specifications and application notes for STI23NM60ND can be found in the product datasheet provided by the manufacturer.