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STFH10N60M2
Product Overview
Category
The STFH10N60M2 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high voltage switching applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The STFH10N60M2 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic devices and systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 10A
- On-Resistance (RDS(on)): 0.6Ω
- Gate-Source Voltage (VGS): ±30V
- Total Gate Charge (Qg): 20nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STFH10N60M2 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power losses and improves efficiency.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Fast switching speed enhances performance
- Low on-resistance reduces power dissipation
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Requires careful handling due to its high voltage rating
Working Principles
The STFH10N60M2 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high voltages and currents.
Detailed Application Field Plans
The STFH10N60M2 is widely used in: - Switch-mode power supplies - Motor control circuits - Inverters and converters - Electronic ballasts
Detailed and Complete Alternative Models
Some alternative models to the STFH10N60M2 include: - IRFP460: Similar voltage and current ratings - FQP27P06: Complementary P-channel MOSFET - IXFN38N100: Higher voltage capability
In conclusion, the STFH10N60M2 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power management and control applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STFH10N60M2 v technických řešeních
What is STFH10N60M2?
- STFH10N60M2 is a 600V, 10A field stop IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.
What are the typical applications of STFH10N60M2?
- STFH10N60M2 is commonly used in applications such as motor control, induction heating, and power supplies.
What is the maximum voltage rating of STFH10N60M2?
- The maximum voltage rating of STFH10N60M2 is 600V.
What is the maximum current rating of STFH10N60M2?
- The maximum current rating of STFH10N60M2 is 10A.
What are the key features of STFH10N60M2?
- Some key features of STFH10N60M2 include low VCE(sat), fast switching speed, and high ruggedness.
What is the thermal resistance of STFH10N60M2?
- The thermal resistance of STFH10N60M2 is typically around 1.25°C/W.
Can STFH10N60M2 be used in high-frequency applications?
- Yes, STFH10N60M2 can be used in high-frequency applications due to its fast switching speed.
Does STFH10N60M2 require a gate driver circuit?
- Yes, STFH10N60M2 requires a gate driver circuit to properly control the switching characteristics.
What are the recommended operating conditions for STFH10N60M2?
- The recommended operating conditions include a maximum junction temperature of 150°C and a maximum collector current of 10A.
Where can I find the detailed datasheet for STFH10N60M2?
- The detailed datasheet for STFH10N60M2 can be found on the manufacturer's website or through authorized distributors.