STF4N80K5: Product Overview and Analysis

Introduction

The STF4N80K5 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance. In this entry, we will provide an overview of the STF4N80K5, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The STF4N80K5 is utilized as a switching device in power supply circuits, motor control, lighting systems, and other electronic applications.
• Characteristics: It exhibits low on-state resistance, high breakdown voltage, and fast switching capabilities, making it suitable for high-power applications.
• Package: The STF4N80K5 is typically available in a TO-220 package, providing ease of mounting and thermal dissipation.
• Essence: Its essence lies in providing efficient power switching and control in various electronic systems.
• Packaging/Quantity: The device is commonly packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

The key specifications of the STF4N80K5 include: - Drain-Source Voltage (VDS): 800V - Continuous Drain Current (ID): 4A - On-State Resistance (RDS(on)): 1.25Ω - Gate-Source Voltage (VGS): ±30V - Total Gate Charge (Qg): 12nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STF4N80K5 features a standard pin configuration with three main terminals: 1. Gate (G): Control terminal for turning the MOSFET on and off. 2. Drain (D): Connects to the positive side of the circuit and carries the output current. 3. Source (S): Connected to the ground or negative side of the circuit.

Functional Features

• High Voltage Capability: The device can withstand high drain-source voltages, making it suitable for high-power applications.
• Low On-State Resistance: This feature minimizes power losses and enhances efficiency during conduction.
• Fast Switching Speed: Enables rapid switching transitions, reducing switching losses and improving overall system performance.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Enhanced power efficiency

Disadvantages

• Sensitivity to static electricity
• Gate drive considerations required for optimal performance

Working Principles

The STF4N80K5 operates based on the principle of field-effect transistors. When a sufficient gate-source voltage is applied, the device allows current to flow from the drain to the source, effectively acting as a switch in electronic circuits. By controlling the gate voltage, the MOSFET can be turned on and off, regulating the flow of current in the circuit.

Detailed Application Field Plans

The STF4N80K5 finds extensive use in the following application fields: - Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation. - Motor Control: Enables precise control of motor speed and direction in industrial and automotive applications. - Lighting Systems: Used for dimming and switching operations in LED lighting systems. - Inverters: Employed in DC-AC converters for renewable energy systems and motor drives.

Detailed and Complete Alternative Models

Some alternative models to the STF4N80K5 include: - IRF840: A similar power MOSFET with comparable voltage and current ratings. - FQP27P06: Offers alternative characteristics for specific application requirements. - IRLB8721: Suitable for high-current applications with low on-state resistance.

In conclusion, the STF4N80K5 power MOSFET serves as a crucial component in various electronic systems, offering high-performance characteristics and versatile applications across different industries.

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