STF35N65M5 - Semiconductor Device Encyclopedia Entry

Introduction

The STF35N65M5 is a semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the STF35N65M5.

Basic Information Overview

• Category: Power MOSFET
• Use: The STF35N65M5 is designed for use in high-power applications such as power supplies, motor control, and lighting systems.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The STF35N65M5 is typically available in a TO-220 package.
• Essence: Its essence lies in providing efficient power management and control in various electronic systems.
• Packaging/Quantity: It is commonly packaged individually or in reels of varying quantities.

Specifications

• Voltage Rating: 650V
• Current Rating: 35A
• On-State Resistance: 0.065Ω
• Gate-Source Voltage (Max): ±20V
• Total Gate Charge: 75nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STF35N65M5 typically has three pins: 1. Gate (G): Input for controlling the switching behavior of the MOSFET. 2. Drain (D): Connection point for the load and the power supply. 3. Source (S): Common reference point for the MOSFET's internal circuitry.

Functional Features

• High Efficiency: Due to its low on-state resistance and gate charge, the STF35N65M5 enables high-efficiency power conversion.
• Fast Switching Speed: It offers rapid switching characteristics, contributing to reduced power losses during operation.
• Robustness: The device is designed to withstand high voltages and currents, enhancing its reliability in demanding applications.

Advantages and Disadvantages

Advantages

• High efficiency and power handling capability
• Fast switching speed
• Robust and reliable performance

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful consideration of drive circuitry due to its high gate-source voltage rating

Working Principles

The STF35N65M5 operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the drain and source terminals. By controlling this conductivity, it regulates the flow of current through the device, enabling efficient power management.

Detailed Application Field Plans

The STF35N65M5 finds extensive application in various fields, including: - Power Supplies: Used in high-power switch-mode power supplies for efficient voltage regulation. - Motor Control: Employed in motor drive circuits for precise and efficient control of electric motors. - Lighting Systems: Integrated into LED driver circuits to manage power delivery to lighting elements.

Detailed and Complete Alternative Models

Some alternative models to the STF35N65M5 include: - IRF840: A comparable power MOSFET with similar voltage and current ratings. - IXFK44N50P: Offers high power handling capabilities and fast switching characteristics. - FDMS86181: Known for its low on-state resistance and robust performance in power applications.

In conclusion, the STF35N65M5 power MOSFET stands as a crucial component in high-power electronic systems, offering efficient power management and control. With its advanced features and robust design, it caters to diverse applications while competing with alternative models in the market.

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