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STF18N60DM2

STF18N60DM2

Product Overview

Category

The STF18N60DM2 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STF18N60DM2 is typically available in a TO-220 package.

Essence

The essence of the STF18N60DM2 lies in its ability to efficiently control high voltages and currents in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 18A
  • On-Resistance (RDS(on)): 0.25Ω
  • Gate-Source Voltage (VGS): ±30V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STF18N60DM2 typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low input capacitance enables fast switching speeds
  • Low on-resistance minimizes power losses

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Higher input capacitance compared to some alternative models
  • Limited availability from certain suppliers

Working Principles

The STF18N60DM2 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate current flow between the drain and source terminals.

Detailed Application Field Plans

The STF18N60DM2 is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the STF18N60DM2 include: - IRF840 - FQP27P06 - IXFN38N100

In conclusion, the STF18N60DM2 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of high-power electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STF18N60DM2 v technických řešeních

  1. What is the maximum drain-source voltage rating of STF18N60DM2?

    • The maximum drain-source voltage rating of STF18N60DM2 is 600V.
  2. What is the continuous drain current rating of STF18N60DM2?

    • The continuous drain current rating of STF18N60DM2 is 18A.
  3. What is the on-resistance of STF18N60DM2?

    • The on-resistance of STF18N60DM2 is typically 0.25 ohms.
  4. Can STF18N60DM2 be used in high-frequency switching applications?

    • Yes, STF18N60DM2 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
  5. What is the maximum junction temperature of STF18N60DM2?

    • The maximum junction temperature of STF18N60DM2 is 150°C.
  6. Is STF18N60DM2 suitable for use in power supplies?

    • Yes, STF18N60DM2 is commonly used in power supply applications due to its high voltage and current ratings.
  7. Does STF18N60DM2 require a heat sink for operation?

    • Depending on the application and operating conditions, a heat sink may be required to ensure proper thermal management for STF18N60DM2.
  8. What type of packaging is STF18N60DM2 available in?

    • STF18N60DM2 is available in a TO-220 package, which is commonly used for power semiconductor devices.
  9. Can STF18N60DM2 be used in motor control applications?

    • Yes, STF18N60DM2 can be used in motor control applications where high voltage and current capabilities are required.
  10. What are some common protection measures when using STF18N60DM2 in circuit designs?

    • Common protection measures include overcurrent protection, overvoltage protection, and thermal management to ensure safe and reliable operation of STF18N60DM2 in circuit designs.