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STD12N60M2

STD12N60M2

Product Overview

Category

The STD12N60M2 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The STD12N60M2 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 12A
  • On-Resistance (RDS(on)): 0.6Ω
  • Gate-Source Voltage (VGS): ±30V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STD12N60M2 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages

  • High voltage capability suitable for demanding applications.
  • Low on-resistance reduces power dissipation and improves efficiency.
  • Fast switching speed enhances performance in high-frequency applications.

Disadvantages

  • Higher gate capacitance may require careful consideration in driver circuit design.
  • Limited by its maximum operating temperature, which may restrict use in extreme environments.

Working Principles

The STD12N60M2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

  • Power supply units
  • Motor control systems
  • Inverters and converters
  • Switching power supplies

Detailed and Complete Alternative Models

  • STP12NM50FP
  • IRFP460
  • FQP12N60

In conclusion, the STD12N60M2 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications. Its characteristics, specifications, and functional features position it as a reliable component in electronic systems, with alternative models providing flexibility in design choices.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STD12N60M2 v technických řešeních

  1. What is the maximum drain-source voltage rating of STD12N60M2?

    • The maximum drain-source voltage rating of STD12N60M2 is 600V.

  2. What is the continuous drain current rating of STD12N60M2?

    • The continuous drain current rating of STD12N60M2 is 12A.

  3. What is the on-state resistance (RDS(on)) of STD12N60M2?

    • The on-state resistance (RDS(on)) of STD12N60M2 is typically 0.65 ohms.

  4. What is the gate-source threshold voltage of STD12N60M2?

    • The gate-source threshold voltage of STD12N60M2 is typically 3V.

  5. What are the typical applications of STD12N60M2?

    • STD12N60M2 can be used in various applications such as switch mode power supplies, motor control, and lighting ballasts.

  6. What is the maximum junction temperature of STD12N60M2?

    • The maximum junction temperature of STD12N60M2 is 150°C.

  7. Does STD12N60M2 have built-in protection features?

    • STD12N60M2 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  8. What type of package does STD12N60M2 come in?

    • STD12N60M2 is available in a TO-252 (DPAK) package.

  9. Can STD12N60M2 be used in high-frequency applications?

    • Yes, STD12N60M2 can be used in high-frequency applications due to its fast switching characteristics.

  10. What are the key advantages of using STD12N60M2 in technical solutions?

    • The key advantages of using STD12N60M2 include its high voltage rating, low on-state resistance, and suitability for various power electronics applications.