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STD10NM65N
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-252 (DPAK)
- Essence: Efficient power management
- Packaging/Quantity: Tape and reel, 2500 units per reel
Specifications
- Voltage Rating: 650V
- Current Rating: 9.5A
- On-Resistance: 0.65Ω
- Gate Threshold Voltage: 2-4V
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The STD10NM65N features a standard TO-252 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- Low input and output capacitance for high-speed switching
- Enhanced avalanche ruggedness for reliable operation
- Low gate charge for reduced drive requirements
Advantages and Disadvantages
Advantages
- High voltage rating suitable for various applications
- Low on-resistance for minimal power dissipation
- Fast switching speed for efficient power management
Disadvantages
- Higher gate threshold voltage compared to some alternative models
- Limited current rating for high-power applications
Working Principles
The STD10NM65N operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate-source voltage is applied, the device allows current to flow between the drain and source terminals.
Detailed Application Field Plans
The STD10NM65N is ideal for use in various power switching applications, including: - Switch-mode power supplies - Motor control - LED lighting - DC-DC converters - Inverters
Detailed and Complete Alternative Models
Some alternative models to consider include: - STP10NM65N: Similar specifications with a different package (TO-220) - STD9NM50N: Lower voltage rating but higher current capability - STD7NM60N: Lower on-resistance and gate charge for specific applications
In conclusion, the STD10NM65N Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. Its functional features and advantages make it a compelling choice for efficient power management, although its limitations should be considered when selecting the appropriate component for specific applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STD10NM65N v technických řešeních
What is the STD10NM65N?
- The STD10NM65N is a N-channel Power MOSFET designed for high efficiency and power density applications.
What is the maximum drain-source voltage of STD10NM65N?
- The maximum drain-source voltage of STD10NM65N is 650V.
What is the typical on-resistance of STD10NM65N?
- The typical on-resistance of STD10NM65N is 0.85 ohms.
What are the typical applications of STD10NM65N?
- STD10NM65N is commonly used in switch mode power supplies, motor control, and lighting applications.
What is the maximum continuous drain current of STD10NM65N?
- The maximum continuous drain current of STD10NM65N is 9.5A.
Does STD10NM65N require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance.
Is STD10NM65N suitable for high-frequency switching applications?
- Yes, STD10NM65N is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
What is the gate-source voltage range for proper operation of STD10NM65N?
- The gate-source voltage range for proper operation of STD10NM65N is typically between -20V and +20V.
Can STD10NM65N be used in automotive applications?
- Yes, STD10NM65N is suitable for automotive applications, provided it meets the specific requirements and standards for automotive use.
Are there any recommended alternative components to STD10NM65N for similar applications?
- Some recommended alternative components for similar applications include STP10NM60N, STD12NM50N, and STP16NF06L.