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STB28N60DM2
Product Overview
Category
The STB28N60DM2 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The STB28N60DM2 is typically available in a TO-263 package.
Essence
The essence of the STB28N60DM2 lies in its ability to efficiently control high voltages and currents in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 28A
- On-Resistance (RDS(on)): 0.14Ω
- Input Capacitance (Ciss): 1800pF
- Power Dissipation (PD): 280W
Detailed Pin Configuration
The STB28N60DM2 typically has three pins: Gate, Drain, and Source. The pin configuration is as follows: - Gate (G) - Pin 1 - Drain (D) - Pin 2 - Source (S) - Pin 3
Functional Features
- High voltage capability allows for use in high-power applications
- Low input capacitance enables fast switching speeds
- Low on-resistance minimizes power losses
Advantages and Disadvantages
Advantages
- High voltage capability suitable for demanding applications
- Fast switching speed for efficient operation
- Low on-resistance reduces power dissipation
Disadvantages
- Higher input capacitance compared to some alternative models
- May require additional circuitry for optimal performance in certain applications
Working Principles
The STB28N60DM2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STB28N60DM2 is commonly used in the following application fields: - Switching power supplies - Motor control - Electronic ballasts - Inverters
Detailed and Complete Alternative Models
Some alternative models to the STB28N60DM2 include: - IRFP460: Similar high-voltage N-channel MOSFET - FDPF33N25: Lower voltage N-channel MOSFET with comparable characteristics - IXFN38N100: High-voltage N-channel MOSFET with different packaging options
In conclusion, the STB28N60DM2 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STB28N60DM2 v technických řešeních
What is the maximum drain-source voltage of STB28N60DM2?
- The maximum drain-source voltage of STB28N60DM2 is 600V.
What is the continuous drain current rating of STB28N60DM2?
- The continuous drain current rating of STB28N60DM2 is 25A.
What is the on-state resistance (RDS(on)) of STB28N60DM2?
- The on-state resistance (RDS(on)) of STB28N60DM2 is typically 0.19 ohms.
What is the gate threshold voltage of STB28N60DM2?
- The gate threshold voltage of STB28N60DM2 is typically 3V.
What are the typical applications of STB28N60DM2 in technical solutions?
- STB28N60DM2 is commonly used in applications such as switch mode power supplies, motor control, and lighting ballasts.
What is the operating temperature range of STB28N60DM2?
- The operating temperature range of STB28N60DM2 is -55°C to 150°C.
Does STB28N60DM2 have built-in protection features?
- Yes, STB28N60DM2 has built-in protection features such as overcurrent protection and thermal shutdown.
What is the gate charge of STB28N60DM2?
- The gate charge of STB28N60DM2 is typically 30nC.
Is STB28N60DM2 suitable for high-frequency switching applications?
- Yes, STB28N60DM2 is suitable for high-frequency switching applications due to its low RDS(on) and gate charge characteristics.
What package type is STB28N60DM2 available in?
- STB28N60DM2 is available in a TO-220 package for easy mounting and heat dissipation.