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STB21NM50N
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STB21NM50N

Introduction

The STB21NM50N is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low input capacitance, fast switching speed
  • Package: TO-220, D2PAK
  • Essence: Power MOSFET for high voltage applications
  • Packaging/Quantity: Typically available in reels or tubes, quantity varies by manufacturer

Specifications

  • Voltage Rating: 500V
  • Current Rating: 21A
  • On-state Resistance: 0.19Ω
  • Gate Threshold Voltage: 3V
  • Operating Temperature: -55°C to 150°C
  • Package Type: TO-220, D2PAK

Detailed Pin Configuration

The STB21NM50N has a standard pin configuration for TO-220 and D2PAK packages: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability suitable for power applications
  • Low input capacitance for fast switching
  • Enhanced ruggedness and reliability
  • Avalanche energy specified

Advantages and Disadvantages

Advantages: - High voltage capability - Fast switching speed - Rugged and reliable - Low input capacitance

Disadvantages: - Higher on-state resistance compared to some alternative models - Limited availability from certain suppliers

Working Principles

The STB21NM50N operates based on the principles of field-effect transistors, utilizing the control of voltage at the gate terminal to regulate the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to pass through, enabling power switching functions.

Detailed Application Field Plans

The STB21NM50N finds application in various fields including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the STB21NM50N include: - IRF840 - FQP27P06 - IXFH21N50P

In summary, the STB21NM50N is a high-voltage power MOSFET with fast switching capabilities, making it suitable for diverse electronic applications requiring efficient power management and control.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STB21NM50N v technických řešeních

  1. What is the STB21NM50N?

    • The STB21NM50N is a 500V, 19A N-channel Power MOSFET designed for high efficiency and power density applications.

  2. What are the key features of the STB21NM50N?

    • The key features include low on-resistance, fast switching speed, low gate charge, and high avalanche ruggedness.

  3. What are the typical applications of the STB21NM50N?

    • Typical applications include switch mode power supplies, motor control, lighting, and automotive systems.

  4. What is the maximum drain-source voltage of the STB21NM50N?

    • The maximum drain-source voltage is 500V.

  5. What is the maximum continuous drain current of the STB21NM50N?

    • The maximum continuous drain current is 19A.

  6. What is the typical on-resistance of the STB21NM50N?

    • The typical on-resistance is 0.25 ohms.

  7. What is the gate-source threshold voltage of the STB21NM50N?

    • The gate-source threshold voltage is typically around 3V.

  8. What is the operating temperature range of the STB21NM50N?

    • The operating temperature range is typically -55°C to 150°C.

  9. Does the STB21NM50N have built-in protection features?

    • Yes, it has built-in protection against overcurrent, overtemperature, and undervoltage.

  10. Is the STB21NM50N RoHS compliant?

    • Yes, the STB21NM50N is RoHS compliant, making it suitable for environmentally friendly designs.