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STB141NF55

STB141NF55

Product Overview

Category

The STB141NF55 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage N-channel enhancement-mode power MOSFET for various electronic applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STB141NF55 is typically available in a TO-263 package.

Essence

The essence of the STB141NF55 lies in its ability to efficiently control and switch high voltages in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 150V
  • Continuous Drain Current (ID): 100A
  • On-Resistance (RDS(on)): 0.014 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 70nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STB141NF55 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and heat generation.

Advantages

  • Suitable for high-voltage applications
  • Efficient power handling capabilities
  • Fast switching speed

Disadvantages

  • Higher input capacitance compared to some alternative models
  • Sensitive to static electricity due to its high voltage capability

Working Principles

The STB141NF55 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STB141NF55 is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the STB141NF55 include: - STP140NF75 - IRF3205 - FDP8878

In conclusion, the STB141NF55 power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power applications. Its characteristics and specifications position it as a reliable component for various electronic designs.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací STB141NF55 v technických řešeních

  1. What is the maximum drain current of STB141NF55?

    • The maximum drain current of STB141NF55 is 140A.
  2. What is the typical on-resistance of STB141NF55?

    • The typical on-resistance of STB141NF55 is 4.5mΩ.
  3. What is the gate threshold voltage of STB141NF55?

    • The gate threshold voltage of STB141NF55 is typically 2V.
  4. What is the maximum power dissipation of STB141NF55?

    • The maximum power dissipation of STB141NF55 is 300W.
  5. What is the operating temperature range of STB141NF55?

    • STB141NF55 can operate within a temperature range of -55°C to 175°C.
  6. Is STB141NF55 suitable for automotive applications?

    • Yes, STB141NF55 is designed for automotive applications.
  7. Does STB141NF55 have built-in protection features?

    • Yes, STB141NF55 has built-in overcurrent and thermal protection.
  8. What is the input capacitance of STB141NF55?

    • The input capacitance of STB141NF55 is typically 6800pF.
  9. Can STB141NF55 be used in high-frequency switching applications?

    • Yes, STB141NF55 is suitable for high-frequency switching applications.
  10. What are the recommended mounting techniques for STB141NF55?

    • STB141NF55 can be mounted using through-hole or surface-mount techniques, following the recommended PCB layout guidelines.