STB13NM50N

Introduction

The STB13NM50N is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The STB13NM50N is utilized as a switching device in power supply circuits, motor control, lighting, and other high-power applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The STB13NM50N is available in a TO-220 package, which provides thermal efficiency and ease of mounting.
• Essence: Its essence lies in providing efficient power switching capabilities with minimal losses.
• Packaging/Quantity: Typically supplied in reels or tubes, the quantity per package varies based on the supplier and customer requirements.

Specifications

• Voltage Rating: 500V
• Current Rating: 11A
• On-State Resistance (RDS(on)): 0.45 Ohms
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-220

Detailed Pin Configuration

The STB13NM50N features a standard TO-220 pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables efficient power transfer and reduces conduction losses.
• High Switching Speed: Facilitates rapid switching, suitable for high-frequency applications.
• Low Gate Charge: Allows for minimal drive power requirements and reduced switching losses.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications
• Suitable for high-frequency switching
• Low power dissipation

Disadvantages

• Sensitive to voltage and current spikes
• Requires careful consideration of driving circuitry to prevent damage

Working Principles

The STB13NM50N operates based on the principles of field-effect transistors, utilizing the control of the gate-source voltage to modulate the conductivity between the drain and source terminals. When the gate-source voltage is applied, the device switches on, allowing current to flow from the drain to the source.

Detailed Application Field Plans

The STB13NM50N finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - Lighting ballasts - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

• STB12NM50N: Similar specifications with a slightly lower voltage rating
• STB14NM50N: Higher voltage rating with comparable performance characteristics
• STP13NM50N: Alternative package type with similar electrical characteristics

In conclusion, the STB13NM50N power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications, making it a versatile choice for efficient power switching and control.

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