M29F080D70N1

Product Overview

Category

M29F080D70N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F080D70N1 retains stored data even when power is disconnected.
• High capacity: This device offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: The M29F080D70N1 has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: This memory device operates at low power levels, making it suitable for battery-powered devices.

Package

The M29F080D70N1 comes in a compact and standardized package, which ensures compatibility with various circuit boards and systems.

Essence

The essence of the M29F080D70N1 lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, containing a specific quantity of devices per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 70 ns
  • Program: 10 μs
  • Erase: 10 ms
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F080D70N1 has a total of 32 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. VCC - Power Supply
19. DQ0 - Data Input/Output
20. DQ1 - Data Input/Output
21. DQ2 - Data Input/Output
22. DQ3 - Data Input/Output
23. DQ4 - Data Input/Output
24. DQ5 - Data Input/Output
25. DQ6 - Data Input/Output
26. DQ7 - Data Input/Output
27. CE - Chip Enable
28. WE - Write Enable
29. OE - Output Enable
30. RESET - Reset Input
31. RP - Ready/Busy Output
32. NC - No Connection

Functional Features

• High-Speed Operation: The M29F080D70N1 offers fast read and write operations, enabling efficient data transfer.
• Reliable Data Retention: This memory device ensures data integrity even in harsh environmental conditions.
• Flexible Interface: The parallel interface allows easy integration with various systems and microcontrollers.
• Low Power Consumption: The M29F080D70N1 operates at low power levels, making it suitable for battery-powered devices.
• Extended Endurance: With a high endurance rating, this memory device can withstand numerous read and write cycles.

Advantages and Disadvantages

Advantages

• High-speed operation for efficient data transfer.
• Reliable data retention in harsh conditions.
• Flexible interface for easy integration.
• Low power consumption, suitable for battery-powered devices.
• Extended endurance for prolonged usage.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Parallel interface may require additional circuitry for compatibility with certain systems.

Working Principles

The M29F080D70N1 utilizes flash memory technology to store and retrieve digital information. It consists of a grid of memory cells, where each cell stores a bit of data as an electrical charge. The state of each memory cell (charged or uncharged) represents the stored data.

During a read operation, the memory controller applies appropriate voltages to the address pins and activates the chip enable (CE) and output enable (OE) signals. This allows the data stored in the selected memory cell to be read from the data pins.

For a write operation, the memory controller provides the desired data to be written and the corresponding address. The write