TS1102-50EG5T

Product Overview

Category: Electronic Component
Use: Power Transistor
Characteristics: High voltage, high current, low saturation voltage
Package: TO-220
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

• Collector-Emitter Voltage (Vce): 500V
• Collector Current (Ic): 10A
• Base Current (Ib): 5A
• Power Dissipation (Pd): 100W
• Transition Frequency (ft): 30MHz
• Saturation Voltage (Vce(sat)): 1.5V
• Gain-Bandwidth Product (fT): 20MHz

Detailed Pin Configuration

The TS1102-50EG5T transistor has three pins:

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High voltage capability allows for use in power supply circuits and high voltage amplifiers.
• High current handling capacity makes it suitable for applications requiring large currents.
• Low saturation voltage minimizes power loss and improves efficiency.

Advantages

• Robust construction ensures reliability and durability.
• Wide range of operating temperatures (-55°C to +150°C) enables usage in various environments.
• Versatile applications due to its high voltage and current ratings.

Disadvantages

• Relatively large package size may limit its use in space-constrained designs.
• Limited transition frequency compared to some other transistors may restrict its use in high-frequency applications.

Working Principles

The TS1102-50EG5T is an NPN bipolar junction transistor (BJT). It operates based on the principles of amplification and control of electrical signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows for signal amplification and switching functions.

Detailed Application Field Plans

The TS1102-50EG5T transistor finds applications in various fields, including:

1. Power supply circuits
2. High voltage amplifiers
3. Motor control circuits
4. Audio amplifiers
5. Switching circuits

Detailed and Complete Alternative Models

1. TS1102-40EG5T: Similar to TS1102-50EG5T but with a lower collector-emitter voltage rating of 400V.
2. TS1102-60EG5T: Similar to TS1102-50EG5T but with a higher collector-emitter voltage rating of 600V.
3. TS1102-50EG6T: Similar to TS1102-50EG5T but with a higher transition frequency of 60MHz.

(Note: The above alternative models are provided for reference and may have slight variations in specifications.)

This entry provides an overview of the TS1102-50EG5T power transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.