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1N6162US
Product Overview
Category
The 1N6162US belongs to the category of semiconductor diodes.
Use
It is commonly used for rectification, voltage regulation, and signal demodulation in electronic circuits.
Characteristics
- Forward voltage drop: Typically around 0.7V
- Reverse breakdown voltage: Vrwm = 200V
- Maximum forward current: If = 1A
- Package type: DO-41
- Packaging/Quantity: Available in bulk or tape and reel packaging, quantity varies by supplier
Specifications
- Maximum Average Forward Current: 1A
- Peak Repetitive Reverse Voltage: 200V
- Operating Temperature Range: -65°C to +175°C
- Storage Temperature Range: -65°C to +175°C
Detailed Pin Configuration
The 1N6162US has two pins, anode (A) and cathode (K), which are identified by a small notch on the body of the diode.
Functional Features
- Low forward voltage drop
- High reverse breakdown voltage
- Fast switching speed
- Compact and durable DO-41 package
Advantages and Disadvantages
Advantages
- Efficient rectification and voltage regulation
- Fast response time
- Compact size
Disadvantages
- Limited maximum forward current compared to higher-rated diodes
- Sensitive to temperature variations
Working Principles
The 1N6162US operates based on the principles of semiconductor physics, utilizing the properties of P-N junctions to allow current flow in one direction while blocking it in the reverse direction.
Detailed Application Field Plans
The 1N6162US is widely used in: - Power supply units - Voltage regulators - Signal demodulation circuits - Overvoltage protection circuits
Detailed and Complete Alternative Models
- 1N4001: Similar characteristics, lower maximum forward current
- 1N5819: Schottky diode alternative with lower forward voltage drop
In conclusion, the 1N6162US semiconductor diode offers efficient rectification and voltage regulation in a compact package, making it suitable for various electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N6162US v technických řešeních
What is 1N6162US?
- 1N6162US is a high-reliability, military-grade silicon power rectifier diode.
What are the key specifications of 1N6162US?
- The key specifications include a maximum repetitive reverse voltage of 200V, average forward current of 6A, and a forward voltage drop of 1.1V at 6A.
What are the typical applications of 1N6162US?
- Typical applications include power supplies, inverters, converters, and other high-reliability electronic systems in military and aerospace environments.
What are the temperature ratings for 1N6162US?
- The diode is rated for operation over a temperature range of -65°C to +175°C.
Is 1N6162US suitable for high-reliability and rugged environments?
- Yes, 1N6162US is designed for use in harsh environments and is built to withstand high levels of stress and extreme conditions.
What are the packaging options available for 1N6162US?
- The diode is available in various package types, including DO-203AB (DO-5) and other military-standard packages.
Does 1N6162US have any certifications or qualifications?
- Yes, it is qualified to MIL-PRF-19500/576 and is compliant with various military and aerospace standards.
What are the advantages of using 1N6162US in technical solutions?
- The diode offers high reliability, ruggedness, and consistent performance in demanding applications, making it ideal for critical systems.
Can 1N6162US be used in commercial applications?
- While it is primarily designed for military and aerospace applications, it can also be used in certain high-reliability commercial applications.
Where can I find detailed technical information about 1N6162US?
- Detailed technical information, including datasheets and application notes, can be found on the manufacturer's website or through authorized distributors.