RRH100P03GZETB

Product Category: Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Power amplification in electronic circuits - Characteristics: High power handling capacity, low distortion, and high efficiency - Package: TO-220AB - Essence: High-power NPN bipolar junction transistor - Packaging/Quantity: Typically sold individually or in small quantities

Specifications: - Maximum Collector-Emitter Voltage (Vce): 100V - Maximum Collector Current (Ic): 30A - Power Dissipation (Pd): 150W - Gain (hfe): 25-250 - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Base (B): Input terminal for controlling the transistor's operation - Collector (C): Output terminal for the amplified current - Emitter (E): Grounding terminal for the transistor

Functional Features: - High power amplification capability - Low saturation voltage - Fast switching speed - Good thermal stability

Advantages: - Suitable for high-power applications - Low distortion in amplification - Efficient heat dissipation due to package design

Disadvantages: - Relatively large physical size - Requires proper heat sinking for high-power operation

Working Principles: The RRH100P03GZETB operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. It amplifies input signals by allowing a larger current to flow from the collector to the emitter.

Detailed Application Field Plans: - Audio amplifiers - Power supply circuits - Motor control systems - RF power amplifiers

Detailed and Complete Alternative Models: - MJE3055T - TIP31C - 2N3055 - MJL4281A

This comprehensive entry provides an in-depth understanding of the RRH100P03GZETB power transistor, covering its specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.