BR25H128F-2CE2

Product Overview

Category

The BR25H128F-2CE2 belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile: Retains data even when power is removed.
• High capacity: Offers a storage capacity of 128 kilobits.
• Serial interface: Communicates with the host system using a serial protocol.
• Low power consumption: Operates at low power levels, making it suitable for battery-powered devices.

Package

The BR25H128F-2CE2 is available in a compact surface-mount package.

Essence

This device serves as a reliable and efficient solution for storing critical data in electronic systems.

Packaging/Quantity

The BR25H128F-2CE2 is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory capacity: 128 kilobits (16 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 1 million cycles
• Data retention: 10 years

Detailed Pin Configuration

The BR25H128F-2CE2 features the following pin configuration:

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (WP)
6. Ground (GND)
7. Power Supply (VCC)

Functional Features

• High-speed data transfer: The SPI interface enables fast and efficient data transfer between the device and the host system.
• Flexible write protection: The Write Protect pin allows users to protect specific memory areas from accidental modification.
• Software and hardware write protection: The device supports both software and hardware methods for write protection, providing enhanced security.
• Sequential read function: Enables efficient reading of consecutive memory locations without the need for repeated address commands.

Advantages

• Compact form factor: The small package size makes it suitable for space-constrained applications.
• Low power consumption: Ideal for battery-powered devices, as it minimizes energy usage.
• High reliability: Non-volatile memory ensures data integrity even in the event of power loss or system failure.
• Easy integration: The SPI interface simplifies the integration process with various microcontrollers and systems.

Disadvantages

• Limited storage capacity: While sufficient for many applications, the 128 kilobits capacity may be insufficient for certain data-intensive use cases.
• Relatively slower write speed: Compared to other non-volatile memory technologies, the write speed of the BR25H128F-2CE2 may be considered slower.

Working Principles

The BR25H128F-2CE2 utilizes a combination of floating gate and tunnel oxide technologies to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the threshold voltage of the memory cell. This change in threshold voltage allows the stored data to be retained even when power is removed. During read operations, the threshold voltage is measured to determine the stored data.

Detailed Application Field Plans

The BR25H128F-2CE2 finds application in various electronic systems, including but not limited to: - Consumer electronics - Industrial automation - Automotive systems - Medical devices - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

1. BR25H128F-WCE2: Similar to the BR25H128F-2CE2, but with extended temperature range (-40°C to +105°C).
2. BR25H128F-WE2: Offers the same features as the BR25H128F-2CE2, but with a wider operating voltage range (1.7V to 5.5V).
3. BR25H128F-JCE2: Designed for automotive applications, offering enhanced reliability and extended temperature range (-40°C to +125°C).

These alternative models provide options based on specific application requirements and environmental conditions.

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