BR24T02FVT-WE2

Product Overview

Category

The BR24T02FVT-WE2 belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile memory: The BR24T02FVT-WE2 retains stored data even when power is disconnected.
• High capacity: This device has a storage capacity of 2 kilobits (256 bytes).
• Low power consumption: It operates efficiently with minimal power requirements.
• Fast data transfer: The BR24T02FVT-WE2 offers high-speed data read and write operations.
• Wide operating voltage range: It can function within a voltage range of 1.8V to 5.5V.

Package

The BR24T02FVT-WE2 is available in a compact SOP-8 package, which ensures easy integration into electronic circuits.

Essence

This memory device is designed to provide reliable and efficient data storage capabilities for electronic systems.

Packaging/Quantity

The BR24T02FVT-WE2 is typically packaged in reels, with each reel containing 3,000 units of the product.

Specifications

• Memory capacity: 2 kilobits (256 bytes)
• Operating voltage: 1.8V - 5.5V
• Data transfer speed: Up to 400 kHz
• Operating temperature range: -40°C to +85°C
• Package type: SOP-8

Detailed Pin Configuration

The BR24T02FVT-WE2 features an SOP-8 package with the following pin configuration:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Write protection: The WP pin allows for write protection, preventing accidental modification of stored data.
• Sequential read and write operations: The BR24T02FVT-WE2 supports sequential read and write operations, enabling efficient data handling.
• High-speed operation: With a maximum data transfer speed of 400 kHz, this device ensures fast and reliable data access.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Wide operating voltage range allows compatibility with various electronic systems.
• Compact package facilitates easy integration into circuits.
• Low power consumption enhances energy efficiency.

Disadvantages

• Limited storage capacity compared to higher-end memory devices.
• Relatively slower data transfer speed compared to some advanced memory technologies.

Working Principles

The BR24T02FVT-WE2 utilizes an electrically erasable programmable read-only memory (EEPROM) technology. It stores data in non-volatile memory cells, which can be electrically programmed and erased as needed. The device operates by receiving commands and data through the serial interface (SDA and SCL pins), allowing for efficient read and write operations.

Detailed Application Field Plans

The BR24T02FVT-WE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. BR24T02FJ-WE2: Similar to the BR24T02FVT-WE2, but with an extended operating temperature range (-40°C to +105°C).
2. BR24T02F-WE2: A lower-cost alternative with the same specifications, but without the SOP-8 package.

These alternative models provide similar functionality and can be considered based on specific application requirements.

In conclusion, the BR24T02FVT-WE2 is a reliable and efficient electronic memory device that offers non-volatile data storage capabilities. With its compact package, wide operating voltage range, and high-speed operation, it finds applications in various electronic systems across different industries. While it may have limitations in terms of storage capacity and data transfer speed, alternative models are available to cater to specific needs.