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BR24S08FV-WE2

BR24S08FV-WE2

Product Overview

Category

The BR24S08FV-WE2 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

  • Non-volatile: The BR24S08FV-WE2 retains stored data even when power is removed.
  • Electrically erasable: Data can be erased and reprogrammed electronically, eliminating the need for physical removal or replacement.
  • High storage capacity: This chip has a storage capacity of 8 kilobits (1 kilobyte).
  • Low power consumption: The BR24S08FV-WE2 operates on low power, making it suitable for battery-powered devices.
  • Wide operating voltage range: It can operate within a voltage range of 1.7V to 5.5V.
  • High reliability: The chip offers excellent data retention and endurance characteristics.

Package and Quantity

The BR24S08FV-WE2 is available in a small form factor package, such as a SOP-8 (Small Outline Package) or similar. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

  • Storage Capacity: 8 kilobits (1 kilobyte)
  • Operating Voltage Range: 1.7V to 5.5V
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating Temperature Range: -40°C to +85°C
  • Write Cycle Endurance: 1 million cycles
  • Data Retention: 100 years

Detailed Pin Configuration

The BR24S08FV-WE2 chip follows the standard pin configuration for an EEPROM device. The pinout is as follows:

  1. VCC: Power supply voltage
  2. SDA: Serial data input/output for I2C communication
  3. SCL: Serial clock input for I2C communication
  4. WP: Write protect pin (optional)
  5. GND: Ground
  6. NC: No connection (reserved for future use)
  7. A0: Address bit 0 (for device addressing)
  8. A1: Address bit 1 (for device addressing)

Functional Features

  • Random access: The BR24S08FV-WE2 allows random access to any memory location, enabling efficient data retrieval.
  • Byte-wise programming: Data can be written or modified at the byte level, providing flexibility in storing and updating information.
  • Hardware write protection: The chip includes a write protect pin (WP) that can be used to prevent accidental or unauthorized writes to the memory.
  • Sequential read mode: It supports sequential read operations, allowing for faster data retrieval.

Advantages and Disadvantages

Advantages

  • Non-volatile storage ensures data retention even during power loss.
  • Electrically erasable and reprogrammable, eliminating the need for physical replacement.
  • Low power consumption makes it suitable for battery-powered devices.
  • Wide operating voltage range provides compatibility with various systems.
  • High reliability with excellent data retention and endurance characteristics.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Slower write speeds compared to some other non-volatile memory types.
  • Relatively higher cost per kilobyte compared to certain alternatives.

Working Principles

The BR24S08FV-WE2 utilizes electrically controlled floating gate transistors to store and retrieve data. When writing data, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charge is measured, allowing the retrieval of the stored data.

Detailed Application Field Plans

The BR24S08FV-WE2 finds applications in various fields, including: 1. Microcontrollers: Used for storing configuration settings, calibration data, and firmware updates. 2. Computers: Employed in BIOS (Basic Input/Output System) chips for storing system parameters and boot code. 3. Consumer Electronics: Utilized in devices like smart TVs, set-top boxes, and audio systems for storing user preferences, channel lists, and firmware updates.

Detailed and Complete Alternative Models

  1. AT24C08: Manufactured by Atmel, this EEPROM chip offers similar specifications and functionality to the BR24S08FV-WE2.
  2. CAT24C08: Produced by ON Semiconductor, this alternative also provides comparable features and compatibility with I2C communication.

Please note that the above alternatives are just a few examples, and there are several other EEPROM chips available in the market with similar capabilities.

Word count: 660 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BR24S08FV-WE2 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of BR24S08FV-WE2 in technical solutions:

  1. Q: What is BR24S08FV-WE2? A: BR24S08FV-WE2 is a specific model of EEPROM (Electrically Erasable Programmable Read-Only Memory) chip manufactured by ROHM Semiconductor.

  2. Q: What is the capacity of BR24S08FV-WE2? A: BR24S08FV-WE2 has a capacity of 8 kilobits, which is equivalent to 1024 bytes or 1 kilobyte.

  3. Q: What is the operating voltage range for BR24S08FV-WE2? A: The operating voltage range for BR24S08FV-WE2 is typically between 1.7V and 5.5V.

  4. Q: What is the maximum clock frequency supported by BR24S08FV-WE2? A: BR24S08FV-WE2 supports a maximum clock frequency of 400 kHz.

  5. Q: Can BR24S08FV-WE2 be used for storing program code? A: No, BR24S08FV-WE2 is primarily designed for storing small amounts of non-volatile data such as configuration settings, calibration data, or user preferences.

  6. Q: Is BR24S08FV-WE2 compatible with I2C communication protocol? A: Yes, BR24S08FV-WE2 uses the I2C (Inter-Integrated Circuit) communication protocol for interfacing with microcontrollers or other devices.

  7. Q: Does BR24S08FV-WE2 have built-in write protection? A: Yes, BR24S08FV-WE2 has a built-in write protection feature that allows you to protect specific memory areas from being overwritten.

  8. Q: What is the endurance of BR24S08FV-WE2? A: BR24S08FV-WE2 has an endurance of 1 million write cycles, which means it can be written to and erased up to 1 million times before it may start to degrade.

  9. Q: Can BR24S08FV-WE2 operate in harsh environments? A: Yes, BR24S08FV-WE2 is designed to operate in a wide temperature range (-40°C to +85°C) and is suitable for use in various industrial or automotive applications.

  10. Q: Are there any specific precautions to consider when using BR24S08FV-WE2? A: It is important to follow the recommended operating conditions, voltage levels, and timing specifications provided in the datasheet to ensure proper functionality and reliability of BR24S08FV-WE2.