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NTMFS5C410NLTT3G

NTMFS5C410NLTT3G

Product Overview

  • Category: Power MOSFET
  • Use: High-efficiency power management
  • Characteristics: Low on-resistance, high current capability, compact package
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Advanced power semiconductor technology
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 75A
  • On-Resistance: 4.1mΩ
  • Package Type: DFN 5x6

Detailed Pin Configuration

The NTMFS5C410NLTT3G features a DFN 5x6 package with the following pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate 9. NC (No Connection) 10. NC (No Connection)

Functional Features

  • Low on-resistance for reduced power dissipation
  • High current capability for efficient power management
  • Compact package for space-constrained applications
  • Enhanced thermal performance for improved reliability

Advantages and Disadvantages

Advantages

  • High efficiency in power management applications
  • Compact size enables design flexibility
  • Enhanced thermal performance for reliability

Disadvantages

  • Sensitive to static discharge, requiring careful handling
  • Higher cost compared to traditional power MOSFETs

Working Principles

The NTMFS5C410NLTT3G operates based on the principles of field-effect transistors, utilizing its low on-resistance and high current capability to efficiently control power flow in various electronic circuits.

Detailed Application Field Plans

The NTMFS5C410NLTT3G is ideally suited for use in: - Switching power supplies - Motor control systems - LED lighting applications - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

For alternative models with similar specifications and characteristics, consider the following: - Infineon OptiMOS™ Power-Transistor IPZ60R045CP - Vishay Siliconix SiHP065N60E - ON Semiconductor NVMFS5C404NLWFT1G

In conclusion, the NTMFS5C410NLTT3G is a high-performance power MOSFET designed for efficient power management in a variety of applications, offering low on-resistance, high current capability, and a compact package for space-constrained designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NTMFS5C410NLTT3G v technických řešeních

  1. What is NTMFS5C410NLTT3G?

    • NTMFS5C410NLTT3G is a Power MOSFET designed for high current, high frequency applications.
  2. What are the key features of NTMFS5C410NLTT3G?

    • The key features include low RDS(on), high current capability, and high switching speed.
  3. What are the typical applications of NTMFS5C410NLTT3G?

    • Typical applications include synchronous buck converters, VRM/VRD solutions, and motor control in computing, telecom, and industrial sectors.
  4. What is the maximum drain-source voltage rating of NTMFS5C410NLTT3G?

    • The maximum drain-source voltage rating is typically 30V.
  5. What is the typical RDS(on) value of NTMFS5C410NLTT3G?

    • The typical RDS(on) value is around 4.1mΩ.
  6. What is the recommended operating temperature range for NTMFS5C410NLTT3G?

    • The recommended operating temperature range is usually -55°C to 150°C.
  7. Does NTMFS5C410NLTT3G require any external components for proper operation?

    • NTMFS5C410NLTT3G may require external components such as gate drivers and passive components for optimal performance in specific applications.
  8. Can NTMFS5C410NLTT3G be used in automotive applications?

    • Yes, NTMFS5C410NLTT3G is suitable for certain automotive applications, but it's important to verify its compatibility with automotive standards and requirements.
  9. What are the thermal characteristics of NTMFS5C410NLTT3G?

    • The thermal characteristics include low thermal resistance and efficient heat dissipation, making it suitable for high-power applications.
  10. Are there any known reliability issues or failure modes associated with NTMFS5C410NLTT3G?

    • NTMFS5C410NLTT3G is generally reliable, but users should follow recommended design guidelines and operating conditions to avoid potential failure modes related to overvoltage, overcurrent, and thermal stress.