Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NTMFS4H013NFT3G

NTMFS4H013NFT3G

Product Overview

Category

The NTMFS4H013NFT3G belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The NTMFS4H013NFT3G is typically available in a small, surface-mount package.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in electronic circuits.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 75A
  • RDS(ON) (Max) @ VGS = 10V: 1.3mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The NTMFS4H013NFT3G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient power management
  • High current-carrying capability for robust performance

Advantages

  • High efficiency leads to reduced heat generation
  • Fast switching speed allows for rapid response in power management
  • Low on-resistance results in minimal power loss

Disadvantages

  • May require careful handling due to sensitivity to static electricity
  • Higher cost compared to standard MOSFETs

Working Principles

The NTMFS4H013NFT3G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the NTMFS4H013NFT3G include: - IRF3205 - FDP8870 - AOD4184

In conclusion, the NTMFS4H013NFT3G power MOSFET offers high efficiency, fast switching speed, and low on-resistance, making it suitable for a wide range of power management applications.

Word count: 324

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NTMFS4H013NFT3G v technických řešeních

  1. What is NTMFS4H013NFT3G?

    • NTMFS4H013NFT3G is a Power MOSFET designed for high current, high frequency applications.
  2. What are the key features of NTMFS4H013NFT3G?

    • The key features include low RDS(on), high current capability, and high switching speed.
  3. What are the typical applications of NTMFS4H013NFT3G?

    • Typical applications include DC-DC converters, synchronous rectification in SMPS, motor control, and power management in computing and telecommunications equipment.
  4. What is the maximum drain-source voltage rating of NTMFS4H013NFT3G?

    • The maximum drain-source voltage rating is typically around 30V.
  5. What is the typical on-state resistance (RDS(on)) of NTMFS4H013NFT3G?

    • The typical on-state resistance is around 1.3 milliohms.
  6. What is the maximum continuous drain current of NTMFS4H013NFT3G?

    • The maximum continuous drain current is typically around 100A.
  7. Does NTMFS4H013NFT3G require a heatsink for operation?

    • It depends on the specific application and the power dissipation requirements. In some high-power applications, a heatsink may be necessary.
  8. Is NTMFS4H013NFT3G suitable for automotive applications?

    • Yes, NTMFS4H013NFT3G is suitable for automotive applications where high efficiency and high reliability are required.
  9. What are the thermal characteristics of NTMFS4H013NFT3G?

    • The device is designed with low thermal resistance to ensure efficient heat dissipation.
  10. Are there any recommended layout considerations for using NTMFS4H013NFT3G?

    • Yes, it is recommended to follow the layout guidelines provided in the datasheet to optimize performance and minimize parasitic effects.