NTMFS4701NT3G

Product Overview

• Category: Power MOSFET
• Use: Switching and amplifying electronic signals in power management applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Power MOSFET for efficient power management
• Packaging/Quantity: Available in reels of 3000 units

Specifications

• Voltage Rating: 40V
• Current Rating: 120A
• On-Resistance: 1.7mΩ
• Gate Charge: 24nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NTMFS4701NT3G features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability
• Robust design for high current handling capability

Advantages and Disadvantages

Advantages

• High efficiency
• Low power dissipation
• Fast response time
• Reliable thermal performance

Disadvantages

• Sensitive to voltage spikes
• Requires careful ESD protection

Working Principles

The NTMFS4701NT3G operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel.

Detailed Application Field Plans

The NTMFS4701NT3G is suitable for a wide range of power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting - Power supplies

Detailed and Complete Alternative Models

• NTMFS4C03N: Similar specifications with a smaller package size
• NTMFS4C06N: Higher current rating with slightly higher on-resistance
• NTMFS4C10N: Lower on-resistance with a higher gate charge

This comprehensive range of alternative models provides flexibility in design and application-specific requirements.

---

This content provides a detailed overview of the NTMFS4701NT3G, covering its product information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.