NTD4906N-1G

Introduction

The NTD4906N-1G is a semiconductor product belonging to the category of power MOSFETs. This device is commonly used in electronic circuits for switching and amplification purposes due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic circuit switching and amplification
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Available in reels with varying quantities

Specifications

The NTD4906N-1G features the following specifications: - Drain-Source Voltage (VDS): 30V - Continuous Drain Current (ID): 74A - On-Resistance (RDS(on) max): 3.5mΩ - Gate Threshold Voltage (VGS(th) max): 2.35V - Total Gate Charge (Qg typ): 38nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The NTD4906N-1G follows the standard pin configuration for a TO-252 package: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)

Functional Features

• High Voltage Capability: The NTD4906N-1G can withstand high drain-source voltages, making it suitable for various applications requiring robust performance.
• Low On-Resistance: With a low RDS(on), this MOSFET minimizes power dissipation and enhances efficiency in electronic circuits.
• Fast Switching Speed: The device offers rapid switching characteristics, enabling quick response times in switching applications.

Advantages and Disadvantages

Advantages

• Efficient Power Management: The NTD4906N-1G facilitates effective power control and management in electronic systems.
• Robust Performance: Capable of handling high currents and voltages, making it suitable for demanding applications.

Disadvantages

• Sensitivity to ESD: Like many semiconductor devices, the NTD4906N-1G may be sensitive to electrostatic discharge (ESD) and requires proper handling during assembly and usage.

Working Principles

The NTD4906N-1G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. By applying appropriate gate-source voltages, the device can effectively regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NTD4906N-1G finds extensive application in various fields, including: - Power Supplies: Used in switch-mode power supplies for efficient power conversion. - Motor Control: Employed in motor drive circuits for controlling and driving motors with high precision. - Lighting Systems: Integrated into LED driver circuits to manage and regulate the power supply to LED lighting systems.

Detailed and Complete Alternative Models

Several alternative models to the NTD4906N-1G include: - IRF4905PbF - FDP8870 - AUIRF4905

In conclusion, the NTD4906N-1G power MOSFET offers high-performance characteristics, making it a versatile component for various electronic applications, especially those requiring efficient power management and robust switching capabilities.

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