NTD4302-1G Product Overview

Introduction

The NTD4302-1G belongs to the category of power MOSFETs and is widely used in various electronic applications. This entry provides a comprehensive overview of the NTD4302-1G, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The NTD4302-1G is commonly used for switching and amplifying electronic signals in power supply circuits, motor control, and other high-current applications.
• Characteristics: High voltage capability, low on-resistance, fast switching speed, and low gate charge.
• Package: TO-252 (DPAK)
• Essence: Efficient power management and control.
• Packaging/Quantity: Typically packaged in reels with varying quantities based on customer requirements.

Specifications

• Voltage Rating: 100V
• Current Rating: 50A
• On-Resistance: 8.5mΩ
• Gate Charge: 28nC
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-252 (DPAK)

Detailed Pin Configuration

The NTD4302-1G features a standard TO-252 (DPAK) package with three pins: 1. Gate (G): Input terminal for controlling the MOSFET's conductivity. 2. Drain (D): Output terminal connected to the load. 3. Source (S): Common terminal connected to the ground or return path.

Functional Features

• High Voltage Capability: Suitable for applications requiring high voltage handling.
• Low On-Resistance: Minimizes power loss and heat generation.
• Fast Switching Speed: Enables efficient switching operations in various electronic circuits.
• Low Gate Charge: Facilitates rapid and precise control of the MOSFET.

Advantages and Disadvantages

Advantages

• High voltage capability enables versatile application usage.
• Low on-resistance enhances energy efficiency.
• Fast switching speed contributes to improved circuit performance.

Disadvantages

• Sensitive to static discharge and overvoltage conditions.
• Heat dissipation may require additional thermal management considerations in high-power applications.

Working Principles

The NTD4302-1G operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch between its on and off states, allowing for precise control of current flow in electronic circuits.

Detailed Application Field Plans

The NTD4302-1G finds extensive use in the following application fields: - Power Supply Circuits: Utilized for efficient power management and regulation. - Motor Control Systems: Enables precise control of motor speed and direction. - Switching Converters: Facilitates high-frequency switching for voltage conversion.

Detailed and Complete Alternative Models

• NTD4302N-1G: Similar specifications with minor variations in voltage and current ratings.
• NTD4302P-1G: Enhanced thermal performance variant suitable for high-temperature environments.
• NTD4303-1G: Higher voltage rating with comparable on-resistance characteristics.

In conclusion, the NTD4302-1G power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a versatile component in modern power management and control systems.

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