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NSVMMBT2907AWT1G
Product Overview
The NSVMMBT2907AWT1G belongs to the category of bipolar transistors and is commonly used in electronic circuits for amplification and switching purposes. This transistor exhibits characteristics such as high current gain, low saturation voltage, and fast switching speed. It is typically packaged in a small SOT-323 package and is available in various packaging quantities.
Specifications
- Maximum Collector-Base Voltage: 60V
- Maximum Collector Current: 600mA
- Power Dissipation: 225mW
- Transition Frequency: 200MHz
- Package Type: SOT-323
Detailed Pin Configuration
The NSVMMBT2907AWT1G features three pins: the emitter, base, and collector. The pin configuration is as follows: - Emitter (E) - Pin 1 - Base (B) - Pin 2 - Collector (C) - Pin 3
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Small form factor
Advantages and Disadvantages
Advantages
- High current gain allows for efficient amplification
- Low saturation voltage reduces power dissipation
- Fast switching speed enables rapid on/off transitions
Disadvantages
- Limited maximum collector current compared to other transistors
- Relatively low maximum collector-base voltage
Working Principles
The NSVMMBT2907AWT1G operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals, allowing for amplification or switching of signals within electronic circuits.
Detailed Application Field Plans
The NSVMMBT2907AWT1G is commonly used in the following applications: - Audio amplifiers - Switching circuits - Signal amplification in sensor interfaces - LED driver circuits
Detailed and Complete Alternative Models
Some alternative models to the NSVMMBT2907AWT1G include: - 2N3904 - BC547 - 2N2222 - BC337
In conclusion, the NSVMMBT2907AWT1G is a versatile bipolar transistor with specific advantages and limitations that make it suitable for various electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NSVMMBT2907AWT1G v technických řešeních
What is NSVMMBT2907AWT1G?
- NSVMMBT2907AWT1G is a PNP bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
What are the key features of NSVMMBT2907AWT1G?
- The key features include a high current gain, low saturation voltage, and a maximum power dissipation of 625mW.
What are the typical applications of NSVMMBT2907AWT1G?
- Typical applications include audio amplification, signal switching, and general purpose switching circuits.
What is the maximum collector current rating of NSVMMBT2907AWT1G?
- The maximum collector current rating is 600mA.
What is the maximum collector-emitter voltage rating of NSVMMBT2907AWT1G?
- The maximum collector-emitter voltage rating is 60V.
What is the thermal resistance of NSVMMBT2907AWT1G?
- The thermal resistance from junction to ambient is 357°C/W.
Is NSVMMBT2907AWT1G suitable for use in low-power applications?
- Yes, NSVMMBT2907AWT1G is suitable for low-power applications due to its low saturation voltage and high current gain.
Can NSVMMBT2907AWT1G be used in audio amplifier circuits?
- Yes, NSVMMBT2907AWT1G is commonly used in audio amplifier circuits due to its high current gain and low noise characteristics.
What are the recommended operating conditions for NSVMMBT2907AWT1G?
- The recommended operating conditions include a collector current of 100mA, a collector-emitter voltage of 20V, and an ambient temperature range of -55°C to 150°C.
Is NSVMMBT2907AWT1G RoHS compliant?
- Yes, NSVMMBT2907AWT1G is RoHS compliant, making it suitable for use in environmentally conscious designs.