ON Semiconductor
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NDD60N900U1T4G
Zobrazit detail DataSheets

NDD60N900U1T4G Product Overview

Introduction

The NDD60N900U1T4G is a high-performance semiconductor device designed for use in power electronics applications. This entry provides an overview of the product, including its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Semiconductor/Power Electronics
  • Use: Power switching and control
  • Characteristics: High voltage and current handling capabilities, fast switching speed, low on-state resistance
  • Package: TO-252-3 (DPAK)
  • Essence: Power MOSFET
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 600V
  • Current Rating: 60A
  • On-State Resistance: 90mΩ
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: DPAK

Detailed Pin Configuration

  • Pin 1 (G): Gate
  • Pin 2 (D): Drain
  • Pin 3 (S): Source

Functional Features

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages

  • High voltage and current handling capabilities
  • Low on-state resistance
  • Fast switching speed
  • Enhanced thermal performance
  • Reliable avalanche energy specification

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The NDD60N900U1T4G operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate-source voltage is applied, the device enters the conducting state, allowing the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NDD60N900U1T4G is suitable for a wide range of power electronics applications, including: - Switching power supplies - Motor drives - Inverters - DC-DC converters - Uninterruptible power supplies (UPS) - Solar inverters

Detailed and Complete Alternative Models

  • Alternative Model 1: NDD50N800U1T4G

    • Voltage Rating: 500V
    • Current Rating: 50A
    • On-State Resistance: 110mΩ

  • Alternative Model 2: NDD70N1000U1T4G

    • Voltage Rating: 700V
    • Current Rating: 70A
    • On-State Resistance: 80mΩ

  • Alternative Model 3: NDD80N1200U1T4G

    • Voltage Rating: 800V
    • Current Rating: 80A
    • On-State Resistance: 70mΩ

In conclusion, the NDD60N900U1T4G offers high-performance characteristics suitable for various power electronics applications, with specific advantages and limitations that should be considered in the design and implementation of electronic systems.

[Word Count: 443]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací NDD60N900U1T4G v technických řešeních

  1. What is NDD60N900U1T4G?

    • NDD60N900U1T4G is a high-power RF transistor designed for use in technical solutions requiring robust and efficient amplification.

  2. What are the key specifications of NDD60N900U1T4G?

    • The key specifications include a frequency range of 960-1215 MHz, a power output of 60W, and a gain of 13dB.

  3. In what applications can NDD60N900U1T4G be used?

    • NDD60N900U1T4G is commonly used in applications such as radar systems, avionics, and other high-power RF amplification needs.

  4. What are the thermal characteristics of NDD60N900U1T4G?

    • The device has excellent thermal performance, with a junction temperature of 200°C and a thermal resistance of 0.7°C/W.

  5. Does NDD60N900U1T4G require any special cooling or heat dissipation methods?

    • Yes, due to its high-power nature, NDD60N900U1T4G may require efficient heat sinking or active cooling methods to maintain optimal performance.

  6. What are the recommended operating conditions for NDD60N900U1T4G?

    • The recommended operating voltage is typically around 28V, with appropriate biasing and matching circuits for optimal performance.

  7. Can NDD60N900U1T4G be used in harsh environmental conditions?

    • Yes, NDD60N900U1T4G is designed to withstand harsh environmental conditions and has proven reliability in rugged applications.

  8. Are there any specific precautions to consider when integrating NDD60N900U1T4G into a technical solution?

    • It's important to ensure proper RF layout and grounding techniques to minimize parasitic effects and optimize performance.

  9. What are the typical efficiency and linearity characteristics of NDD60N900U1T4G?

    • The device exhibits high efficiency and good linearity, making it suitable for demanding RF amplification requirements.

  10. Where can I find detailed application notes and support for implementing NDD60N900U1T4G in my technical solution?

    • Detailed application notes and support resources for NDD60N900U1T4G can be found on the manufacturer's website or by contacting their technical support team.