Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
MMFZ15T3G

MMFZ15T3G

Introduction

The MMFZ15T3G is a zener diode that belongs to the category of electronic components. It is commonly used in electronic circuits for voltage regulation and protection against voltage spikes.

Basic Information Overview

  • Category: Electronic component
  • Use: Voltage regulation, protection against voltage spikes
  • Characteristics: Zener diode, reverse breakdown voltage, low dynamic resistance
  • Package: SOD-123 package
  • Essence: Semiconductor material with specific doping
  • Packaging/Quantity: Typically available in reels of 3000 units

Specifications

  • Voltage Range: 2.4V to 75V
  • Power Dissipation: 1W
  • Operating Temperature: -65°C to +150°C
  • Forward Voltage: 1.5V
  • Reverse Current: 5μA

Detailed Pin Configuration

The MMFZ15T3G zener diode has two pins, typically denoted as the anode and cathode. The pinout configuration follows the standard SOD-123 package layout.

Functional Features

  • Voltage Regulation: Maintains a constant voltage across its terminals.
  • Voltage Protection: Safeguards sensitive electronic components from voltage spikes.
  • Low Dynamic Resistance: Allows for stable voltage regulation.

Advantages and Disadvantages

Advantages

  • Precise voltage regulation
  • Compact size
  • Low cost

Disadvantages

  • Limited power dissipation capability
  • Susceptible to thermal runaway under high current conditions

Working Principles

The MMFZ15T3G zener diode operates based on the principle of the zener effect. When the voltage across its terminals exceeds the specified breakdown voltage, it allows current to flow in the reverse direction, effectively regulating the voltage.

Detailed Application Field Plans

The MMFZ15T3G zener diode finds applications in various electronic circuits, including: - Voltage regulators - Overvoltage protection circuits - Signal clamping circuits - Power supplies

Detailed and Complete Alternative Models

  • BZX84C2V4: Similar zener diode with a breakdown voltage of 2.4V
  • MMBZ15VD: Zener diode with similar characteristics and SOD-123 package

In conclusion, the MMFZ15T3G zener diode is a crucial component in electronic circuits, providing precise voltage regulation and protection against voltage spikes. Its compact size and cost-effectiveness make it a popular choice for various applications.

Word Count: 345

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMFZ15T3G v technických řešeních

  1. What is MMFZ15T3G?

    • MMFZ15T3G is a Zener diode with a voltage of 15V and a power dissipation of 500mW.
  2. What are the typical applications of MMFZ15T3G?

    • MMFZ15T3G is commonly used in voltage regulation, overvoltage protection, and signal clamping applications.
  3. What is the maximum current that MMFZ15T3G can handle?

    • The maximum current for MMFZ15T3G is typically around 50mA.
  4. How does MMFZ15T3G provide overvoltage protection?

    • MMFZ15T3G acts as a voltage clamp, conducting current when the voltage across it exceeds its breakdown voltage, thereby protecting downstream components.
  5. Can MMFZ15T3G be used in reverse bias?

    • Yes, MMFZ15T3G can be used in reverse bias for certain applications such as voltage reference circuits.
  6. What is the temperature range for MMFZ15T3G?

    • MMFZ15T3G typically operates within a temperature range of -65°C to 150°C.
  7. Is MMFZ15T3G suitable for high-frequency applications?

    • MMFZ15T3G can be used in high-frequency applications due to its fast response time and low capacitance.
  8. What are the package options available for MMFZ15T3G?

    • MMFZ15T3G is available in various surface mount packages such as SOD-123 and SOD-323.
  9. Does MMFZ15T3G require any external components for operation?

    • MMFZ15T3G can be used independently but may require a series resistor for certain applications to limit the current.
  10. Are there any potential failure modes for MMFZ15T3G?

    • Common failure modes for MMFZ15T3G include thermal runaway under high current conditions and voltage overshoot during transient events.