ON Semiconductor
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MMBFV170LT3G

MMBFV170LT3G

Introduction

The MMBFV170LT3G is a field-effect transistor (FET) belonging to the category of small signal transistors. This device is commonly used in electronic circuits for amplification and switching applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Small Signal Transistor
  • Use: Amplification and Switching Applications
  • Characteristics: Low Power Dissipation, High Input Impedance
  • Package: SOT-23
  • Essence: Field-Effect Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Drain-Source Voltage (VDS): 25V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 0.22A
  • Total Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The MMBFV170LT3G features a standard SOT-23 package with three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High Input Impedance
  • Low Power Dissipation
  • Fast Switching Speed

Advantages and Disadvantages

Advantages

  • Small Package Size
  • Low Input Capacitance
  • High Gain

Disadvantages

  • Limited Maximum Voltage and Current Ratings
  • Susceptible to Electrostatic Discharge (ESD)

Working Principles

The MMBFV170LT3G operates based on the field-effect principle, where the flow of current between the source and drain terminals is controlled by the voltage applied to the gate terminal. This allows for efficient amplification and switching of electronic signals.

Detailed Application Field Plans

The MMBFV170LT3G finds extensive use in various electronic applications, including: - Audio Amplifiers - Signal Processing Circuits - Sensor Interfaces - Battery Management Systems

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative models to consider include: - 2N7002 - BS170 - DMN2004K

In conclusion, the MMBFV170LT3G is a versatile small signal transistor with distinct characteristics that make it suitable for a wide range of electronic applications, despite its limitations in voltage and current handling capabilities.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MMBFV170LT3G v technických řešeních

  1. What is MMBFV170LT3G?

    • MMBFV170LT3G is a N-channel JFET transistor designed for use in various electronic applications.

  2. What are the key features of MMBFV170LT3G?

    • The key features of MMBFV170LT3G include low on-state resistance, high forward transfer admittance, and low leakage current.

  3. In what technical solutions can MMBFV170LT3G be used?

    • MMBFV170LT3G can be used in audio amplifiers, signal processing circuits, voltage-controlled resistors, and other analog applications.

  4. What is the maximum drain-source voltage for MMBFV170LT3G?

    • The maximum drain-source voltage for MMBFV170LT3G is 25 volts.

  5. What is the typical input capacitance of MMBFV170LT3G?

    • The typical input capacitance of MMBFV170LT3G is 6 picofarads.

  6. What is the recommended operating temperature range for MMBFV170LT3G?

    • The recommended operating temperature range for MMBFV170LT3G is -55°C to 150°C.

  7. Can MMBFV170LT3G be used in low-power applications?

    • Yes, MMBFV170LT3G is suitable for low-power applications due to its low on-state resistance and low leakage current.

  8. Does MMBFV170LT3G require external biasing?

    • No, MMBFV170LT3G is a depletion-mode JFET and does not require external biasing.

  9. What are the typical applications where MMBFV170LT3G is not recommended?

    • MMBFV170LT3G is not recommended for high-power switching applications or digital logic circuits.

  10. Where can I find detailed technical specifications for MMBFV170LT3G?

    • Detailed technical specifications for MMBFV170LT3G can be found in the datasheet provided by the manufacturer.