MJD45H11TM

Introduction

The MJD45H11TM is a power transistor belonging to the category of discrete semiconductor products. This device is commonly used in electronic circuits for amplification and switching applications due to its specific characteristics and performance.

Basic Information Overview

Category: Discrete Semiconductor Product
Use: Amplification and Switching Applications
Characteristics: High Power Dissipation, Low Saturation Voltage
Package: DPAK (TO-252)
Essence: Power Transistor
Packaging/Quantity: Tape & Reel (1000 units per reel)

Specifications

The MJD45H11TM features the following specifications: - Collector-Emitter Voltage (VCEO): 80V - Collector Current (IC): 8A - Power Dissipation (PD): 2W - DC Current Gain (hFE): 40 to 160 - Transition Frequency (fT): 4MHz

Detailed Pin Configuration

The MJD45H11TM has a standard DPAK (TO-252) package with three pins: 1. Pin 1: Emitter 2. Pin 2: Base 3. Pin 3: Collector

Functional Features

High Collector-Emitter Breakdown Voltage
Low Saturation Voltage
Fast Switching Speed

Advantages and Disadvantages

Advantages

High Power Dissipation Capability
Low Saturation Voltage for Efficient Switching
Wide Range of DC Current Gain

Disadvantages

Relatively Lower Transition Frequency
Limited Maximum Collector Current

Working Principles

The MJD45H11TM operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its emitter and collector terminals through the base terminal.

Detailed Application Field Plans

The MJD45H11TM finds extensive use in various applications, including: - Power Amplifiers - Motor Control Circuits - Switching Regulators - LED Drivers

Detailed and Complete Alternative Models

Some alternative models to the MJD45H11TM include: - MJD44H11TM - MJD45H11G - MJD45H11T4G

In conclusion, the MJD45H11TM power transistor offers high power dissipation and low saturation voltage, making it suitable for amplification and switching applications in diverse electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MJD45H11TM v technických řešeních

What is MJD45H11TM?
- MJD45H11TM is a high-power NPN transistor designed for use in general-purpose amplifier and switching applications.
What are the key features of MJD45H11TM?
- The MJD45H11TM transistor offers high current capability, low collector-emitter saturation voltage, and excellent switching speed.
What are the typical applications of MJD45H11TM?
- Typical applications include audio amplifiers, power management circuits, motor control, and general-purpose switching circuits.
What is the maximum collector current of MJD45H11TM?
- The maximum collector current is 8A, making it suitable for high-power applications.
What is the maximum collector-emitter voltage of MJD45H11TM?
- The maximum collector-emitter voltage is 80V, allowing for versatile use in various circuit designs.
Does MJD45H11TM require a heat sink for operation?
- Yes, due to its high-power capabilities, MJD45H11TM typically requires a heat sink for efficient thermal management.
Is MJD45H11TM suitable for use in automotive applications?
- Yes, MJD45H11TM is often used in automotive systems such as electronic ignition, power windows, and other high-current switching applications.
What are the recommended operating conditions for MJD45H11TM?
- It is recommended to operate MJD45H11TM within a temperature range of -55°C to 150°C and with proper biasing and current limiting.
Can MJD45H11TM be used in audio amplifier designs?
- Yes, MJD45H11TM is well-suited for audio amplifier applications due to its high current capability and low saturation voltage.
Where can I find detailed technical specifications for MJD45H11TM?
- Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.