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FQD2N60TM - Product Encyclopedia Entry
Introduction
The FQD2N60TM is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the product, including its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: Electronic Components
- Use: Power MOSFET for electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-252 (DPAK)
- Essence: Power management in electronic devices
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on supplier
Specifications
- Voltage Rating: 600V
- Current Rating: 2A
- On-Resistance: 3.5Ω
- Gate Charge: 8nC
- Operating Temperature Range: -55°C to 150°C
- Package Type: TO-252 (DPAK)
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- High voltage capability suitable for power applications
- Low on-resistance minimizes power loss
- Fast switching speed enables efficient operation
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Sensitive to static electricity
- Limited current rating compared to higher-power MOSFETs
Working Principles
The FQD2N60TM operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high currents in electronic circuits.
Detailed Application Field Plans
The FQD2N60TM is commonly used in the following applications: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the FQD2N60TM include: - IRF840 - STP16NF06L - FQP50N06L - IRL540
In conclusion, the FQD2N60TM power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management applications in electronic devices.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FQD2N60TM v technických řešeních
What is the maximum drain-source voltage rating of FQD2N60TM?
- The maximum drain-source voltage rating of FQD2N60TM is 600V.
What is the continuous drain current rating of FQD2N60TM?
- The continuous drain current rating of FQD2N60TM is 2A.
What is the on-resistance of FQD2N60TM?
- The on-resistance of FQD2N60TM is typically 4.5 ohms.
Can FQD2N60TM be used in high-frequency switching applications?
- Yes, FQD2N60TM can be used in high-frequency switching applications due to its low gate charge and fast switching characteristics.
What is the maximum junction temperature of FQD2N60TM?
- The maximum junction temperature of FQD2N60TM is 150°C.
Is FQD2N60TM suitable for use in power supplies?
- Yes, FQD2N60TM is suitable for use in power supplies, particularly in low to medium power applications.
Does FQD2N60TM require a heat sink for operation?
- Depending on the application and operating conditions, FQD2N60TM may require a heat sink to dissipate heat effectively.
What type of packaging is FQD2N60TM available in?
- FQD2N60TM is available in a TO-252 package.
Can FQD2N60TM be used in motor control applications?
- Yes, FQD2N60TM can be used in motor control applications, especially in low-power motor drive circuits.
What are the typical applications of FQD2N60TM in technical solutions?
- Typical applications of FQD2N60TM include power management, motor control, lighting, and general-purpose switching circuits.