ON Semiconductor
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FQD13N06TM
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FQD13N06TM

Product Overview

The FQD13N06TM is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic circuits and devices due to its characteristics such as high efficiency, low on-resistance, and fast switching speed. The package typically consists of a TO-252 or DPAK (TO-252) form factor, and it is available in various packaging quantities to suit different production needs.

Specifications

  • Voltage Rating: 60V
  • Current Rating: 13A
  • On-Resistance: 0.065Ω
  • Package Type: TO-252 (DPAK)
  • Packaging Quantity: Varies

Pin Configuration

The FQD13N06TM typically follows the standard pin configuration for power MOSFETs, with the gate, drain, and source pins clearly labeled for easy integration into circuit designs.

Functional Features

  • High Efficiency: The FQD13N06TM offers low on-resistance, resulting in minimal power loss and high efficiency in electronic circuits.
  • Fast Switching Speed: This MOSFET provides rapid switching capabilities, making it suitable for applications requiring quick response times.

Advantages and Disadvantages

Advantages

  • Low On-Resistance: Enables efficient power management and reduced heat dissipation.
  • Fast Switching Speed: Ideal for applications requiring rapid switching.

Disadvantages

  • Sensitivity to Overvoltage: May require additional protection circuitry in high-voltage applications.

Working Principles

The FQD13N06TM operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively regulate the current flow through the circuit.

Application Field Plans

The FQD13N06TM finds extensive use in various applications, including: - Switching Power Supplies - Motor Control Circuits - LED Lighting Systems - Battery Management Systems

Alternative Models

For those seeking alternative options, the following models can be considered: - IRF3205 - STP55NF06L - FQP30N06L

In conclusion, the FQD13N06TM power MOSFET offers high efficiency, fast switching speed, and versatile application possibilities, making it a valuable component in modern electronic designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FQD13N06TM v technických řešeních

  1. What is the maximum drain-source voltage for FQD13N06TM?

    • The maximum drain-source voltage for FQD13N06TM is 60V.

  2. What is the continuous drain current rating of FQD13N06TM?

    • The continuous drain current rating of FQD13N06TM is 13A.

  3. What is the on-resistance of FQD13N06TM at a specific gate-source voltage?

    • The on-resistance of FQD13N06TM varies with gate-source voltage, typically around 0.045 ohms at Vgs = 10V.

  4. Can FQD13N06TM be used in automotive applications?

    • Yes, FQD13N06TM is suitable for automotive applications due to its ruggedness and reliability.

  5. What is the typical gate charge of FQD13N06TM?

    • The typical gate charge of FQD13N06TM is around 15nC.

  6. Is FQD13N06TM suitable for switching applications?

    • Yes, FQD13N06TM is designed for high-speed switching applications.

  7. What is the operating temperature range of FQD13N06TM?

    • The operating temperature range of FQD13N06TM is typically -55°C to 175°C.

  8. Does FQD13N06TM require a heat sink for certain applications?

    • Depending on the application and power dissipation, a heat sink may be required for FQD13N06TM.

  9. Can FQD13N06TM be used in low-side or high-side switch configurations?

    • FQD13N06TM can be used in both low-side and high-side switch configurations.

  10. What are some common applications for FQD13N06TM?

    • Common applications for FQD13N06TM include motor control, power supplies, DC-DC converters, and load switching.