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FQB12N50TM_AM002
Product Overview
Category
The FQB12N50TM_AM002 belongs to the category of power MOSFETs.
Use
It is used as a switching device in power supply applications, motor control, and other high voltage applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The FQB12N50TM_AM002 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 12A
- On-Resistance (RDS(on)): 0.52Ω
- Gate-Source Voltage (VGS): ±30V
- Total Gate Charge (Qg): 22nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The FQB12N50TM_AM002 follows the standard pin configuration for a TO-263 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher gate capacitance compared to some alternative models
- Limited availability from certain suppliers
Working Principles
The FQB12N50TM_AM002 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The FQB12N50TM_AM002 is well-suited for use in: - Switching power supplies - Motor control circuits - High voltage DC-DC converters - Inverters for industrial and automotive applications
Detailed and Complete Alternative Models
Some alternative models to the FQB12N50TM_AM002 include: - IRF840 - STP16NF06 - FDP8878
In conclusion, the FQB12N50TM_AM002 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FQB12N50TM_AM002 v technických řešeních
What is the maximum voltage rating of FQB12N50TM_AM002?
- The maximum voltage rating of FQB12N50TM_AM002 is 500V.
What is the maximum continuous drain current of FQB12N50TM_AM002?
- The maximum continuous drain current of FQB12N50TM_AM002 is 12A.
What type of package does FQB12N50TM_AM002 come in?
- FQB12N50TM_AM002 comes in a TO-263 package.
What are the typical applications for FQB12N50TM_AM002?
- FQB12N50TM_AM002 is commonly used in power supplies, motor control, and lighting applications.
What is the on-resistance of FQB12N50TM_AM002?
- The on-resistance of FQB12N50TM_AM002 is typically 0.6 ohms.
Is FQB12N50TM_AM002 suitable for high-frequency switching applications?
- Yes, FQB12N50TM_AM002 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
What is the gate-source threshold voltage of FQB12N50TM_AM002?
- The gate-source threshold voltage of FQB12N50TM_AM002 is typically around 4V.
Does FQB12N50TM_AM002 require a heat sink for operation?
- Depending on the application and power dissipation, FQB12N50TM_AM002 may require a heat sink for efficient operation.
Can FQB12N50TM_AM002 be used in automotive applications?
- Yes, FQB12N50TM_AM002 can be used in automotive applications where its voltage and current ratings are suitable.
What are the recommended storage and operating temperature ranges for FQB12N50TM_AM002?
- The recommended storage temperature range for FQB12N50TM_AM002 is -55°C to 150°C, and the recommended operating temperature range is -55°C to 150°C.