FDP085N10A

Introduction

The FDP085N10A is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The FDP085N10A is commonly used as a switching device in power supply circuits, motor control, and other high-power applications.
• Characteristics: This MOSFET is known for its low on-state resistance, high switching speed, and robustness.
• Package: The FDP085N10A is typically available in a TO-220 package, which offers good thermal performance and ease of mounting.
• Essence: The essence of this component lies in its ability to efficiently control high currents and voltages in various electronic circuits.
• Packaging/Quantity: It is usually supplied in reels or tubes containing multiple units, depending on the manufacturer's specifications.

Specifications

• Voltage Rating: 100V
• Current Rating: 85A
• On-State Resistance (RDS(on)): 8.5 mΩ
• Gate Threshold Voltage (VGS(th)): 2V - 4V
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-220

Detailed Pin Configuration

The FDP085N10A typically features a standard TO-220 pin configuration with three pins: gate (G), drain (D), and source (S).

• Pin 1 (G): Gate terminal for controlling the MOSFET's conductivity.
• Pin 2 (D): Drain terminal connected to the load or power supply.
• Pin 3 (S): Source terminal serving as the reference point for the drain voltage.

Functional Features

• High Current Capability: The FDP085N10A can handle high continuous and pulsed currents, making it suitable for power applications.
• Low On-State Resistance: This MOSFET exhibits low RDS(on), resulting in reduced conduction losses and improved efficiency.
• Fast Switching Speed: Its high-speed switching characteristics enable efficient power control and regulation in various circuits.

Advantages and Disadvantages

Advantages

• High current-handling capability
• Low on-state resistance
• Fast switching speed
• Robust construction for reliability

Disadvantages

• Higher gate drive requirements compared to some lower-voltage MOSFETs
• Potential for higher switching losses at very high frequencies

Working Principles

The FDP085N10A operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters a low-resistance state, allowing current to flow through the device. Conversely, reducing the gate voltage turns off the MOSFET, interrupting the current flow.

Detailed Application Field Plans

The FDP085N10A finds extensive use in the following application fields: - Power supply circuits - Motor control systems - Inverter and converter designs - Audio amplifiers - High-current switching applications

Detailed and Complete Alternative Models

• FDP090N10: Similar power MOSFET with slightly different electrical characteristics
• IRF1405: Alternative MOSFET offering comparable performance in high-power applications
• STP80NF10: MOSFET with similar voltage and current ratings for power electronics applications

In conclusion, the FDP085N10A power MOSFET offers high current-handling capabilities, low on-state resistance, and fast switching speeds, making it well-suited for various power applications. Understanding its specifications, pin configuration, functional features, and alternative models provides valuable insights for engineers and designers seeking to incorporate this component into their electronic systems.

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