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FDD86326

FDD86326 Product Overview

Introduction

The FDD86326 is a semiconductor product belonging to the category of power MOSFETs. This device is commonly used in electronic circuits for its unique characteristics and performance. The following entry provides an overview of the FDD86326, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Electronic circuits
  • Characteristics: High power handling, low on-resistance, fast switching speed
  • Package: TO-252
  • Essence: Semiconductor device for power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 30A
  • On-Resistance: 8.5mΩ
  • Gate Charge: 35nC
  • Operating Temperature Range: -55°C to 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3

Detailed Pin Configuration

The FDD86326 typically features a standard TO-252 package with three pins: 1. Gate (G): Input terminal for controlling the MOSFET 2. Drain (D): Output terminal for the high-power connection 3. Source (S): Connection to the ground or common reference point

Functional Features

  • High Power Handling: Capable of managing high currents and voltages effectively
  • Low On-Resistance: Minimizes power loss and heat generation
  • Fast Switching Speed: Enables rapid switching in electronic circuits

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Low on-resistance for efficient power management
  • Fast switching speed for improved circuit performance

Disadvantages

  • Sensitivity to static electricity and voltage spikes
  • Limited voltage and current ratings compared to some other power MOSFETs

Working Principles

The FDD86326 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for effective power management within electronic circuits.

Detailed Application Field Plans

The FDD86326 finds extensive use in various applications, including but not limited to: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Battery management systems

Detailed and Complete Alternative Models

For applications requiring different specifications or form factors, alternative models to the FDD86326 include: - FDD6637: Similar power MOSFET with lower on-resistance - FDD8447L: Higher voltage rating power MOSFET suitable for specific applications - FDD5614: Lower current rating MOSFET for less demanding applications

In conclusion, the FDD86326 power MOSFET offers high power handling, low on-resistance, and fast switching speed, making it a versatile component in various electronic circuits and applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FDD86326 v technických řešeních

  1. What is FDD86326?

    • FDD86326 is a high-power N-channel MOSFET designed for various technical applications requiring efficient power management.
  2. What is the maximum voltage and current rating of FDD86326?

    • The maximum voltage rating is 150V, and the continuous drain current rating is 80A.
  3. What are the typical applications of FDD86326?

    • FDD86326 is commonly used in applications such as motor control, power supplies, and DC-DC converters.
  4. What is the on-resistance of FDD86326?

    • The on-resistance is typically around 8.5mΩ at a Vgs of 10V.
  5. Is FDD86326 suitable for automotive applications?

    • Yes, FDD86326 is designed to meet the requirements for automotive applications, including those with high power demands.
  6. Does FDD86326 require a heatsink for operation?

    • Depending on the application and power dissipation, a heatsink may be necessary to ensure proper thermal management.
  7. What are the thermal characteristics of FDD86326?

    • The thermal resistance from junction to case (RθJC) is typically 0.5°C/W.
  8. Can FDD86326 be used in parallel to increase current handling capability?

    • Yes, FDD86326 can be used in parallel to share the load and increase the overall current handling capability.
  9. What are the recommended gate drive voltage levels for FDD86326?

    • The recommended gate drive voltage is typically between 8V and 10V for optimal performance.
  10. Are there any specific layout considerations when using FDD86326 in a PCB design?

    • It is recommended to minimize the loop area of high-current paths and provide adequate copper area for heat dissipation in the PCB layout when using FDD86326.