ON Semiconductor
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FDD850N10L
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FDD850N10L

Introduction

The FDD850N10L is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplification of electrical signals
  • Characteristics: High power handling capacity, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 85A
  • On-Resistance: 8.5 mΩ
  • Gate Charge: 45nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The FDD850N10L typically has three pins: 1. Gate (G): Input for controlling the switching behavior 2. Drain (D): Output terminal for the high-power signal 3. Source (S): Common reference point for the input and output signals

Functional Features

  • Low On-Resistance: Enables efficient power transfer with minimal losses
  • Fast Switching Speed: Facilitates rapid control of electrical signals
  • High Current Handling Capacity: Suitable for high-power applications

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance for efficient power management
  • Fast switching speed for precise control

Disadvantages

  • Sensitive to voltage spikes and transients
  • Requires careful thermal management at high currents

Working Principles

The FDD850N10L operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows the passage of high-power signals with minimal resistance.

Detailed Application Field Plans

The FDD850N10L finds extensive use in various applications, including: - Switching Power Supplies: Efficiently regulate power flow in electronic devices - Motor Control: Enable precise control of motor speed and direction - Inverters: Convert DC power to AC for use in appliances and industrial equipment

Detailed and Complete Alternative Models

Some alternative models to the FDD850N10L include: - IRF1405: Similar power MOSFET with a higher voltage rating - FDP8878: Lower on-resistance MOSFET suitable for specific applications - IXFK85N10: MOSFET with comparable specifications for alternative design considerations

In conclusion, the FDD850N10L power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic systems.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FDD850N10L v technických řešeních

  1. What is FDD850N10L?

    • FDD850N10L is a power MOSFET transistor designed for high-speed switching applications.

  2. What are the key specifications of FDD850N10L?

    • The FDD850N10L has a maximum drain-source voltage of 100V, a continuous drain current of 75A, and a low on-resistance.

  3. What are the typical applications of FDD850N10L?

    • FDD850N10L is commonly used in power supplies, motor control, and other high-current switching applications.

  4. What are the advantages of using FDD850N10L in technical solutions?

    • FDD850N10L offers low on-resistance, high-speed switching capabilities, and high current-handling capacity, making it suitable for demanding applications.

  5. How do I properly drive FDD850N10L in my circuit?

    • It is important to use proper gate drive circuitry to ensure fast and efficient switching of FDD850N10L. This may involve using appropriate gate drivers and controlling the gate voltage carefully.

  6. What are the thermal considerations when using FDD850N10L?

    • Proper heat sinking and thermal management are crucial when using FDD850N10L to ensure that it operates within its specified temperature limits.

  7. Are there any common failure modes associated with FDD850N10L?

    • Overheating due to inadequate thermal management and overstressing the device beyond its rated specifications are common causes of failure.

  8. Can FDD850N10L be used in parallel to handle higher currents?

    • Yes, FDD850N10L can be used in parallel to increase the current-handling capacity in high-power applications.

  9. What are the recommended PCB layout guidelines for FDD850N10L?

    • Proper attention to minimizing parasitic inductance and ensuring good thermal conductivity in the PCB layout is essential for optimal performance.

  10. Where can I find detailed application notes and reference designs for FDD850N10L?

    • The manufacturer's datasheet, application notes, and online resources provide valuable information and reference designs for using FDD850N10L in technical solutions.