ON Semiconductor
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
FDD5N50NZFTM
Zobrazit detail DataSheets

FDD5N50NZFTM

Product Overview

Category

The FDD5N50NZFTM belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The FDD5N50NZFTM is typically available in a TO-252 package.

Essence

This MOSFET is essential for controlling high-power applications efficiently.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 5A
  • On-Resistance (RDS(on)): 1.6Ω
  • Power Dissipation (PD): 40W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The FDD5N50NZFTM features a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of current flow.

Advantages

  • Suitable for high-voltage applications
  • Low power dissipation
  • Fast response time

Disadvantages

  • Limited continuous drain current compared to higher-rated MOSFETs
  • Higher on-resistance compared to some specialized MOSFETs

Working Principles

The FDD5N50NZFTM operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The FDD5N50NZFTM is commonly used in: - Switching power supplies - Motor control circuits - Electronic ballasts - Inverters

Detailed and Complete Alternative Models

  • IRF840
  • STP55NF06L
  • FQP50N06

In conclusion, the FDD5N50NZFTM is a versatile power MOSFET suitable for a wide range of high-voltage applications, offering a balance of performance and efficiency.

[Word count: 324]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FDD5N50NZFTM v technických řešeních

  1. What is the maximum drain-source voltage of FDD5N50NZFTM?

    • The maximum drain-source voltage of FDD5N50NZFTM is 500V.

  2. What is the continuous drain current rating of FDD5N50NZFTM?

    • The continuous drain current rating of FDD5N50NZFTM is 5A.

  3. What is the on-resistance of FDD5N50NZFTM?

    • The on-resistance of FDD5N50NZFTM is typically 2.5 ohms.

  4. Can FDD5N50NZFTM be used in high-frequency applications?

    • Yes, FDD5N50NZFTM can be used in high-frequency applications due to its fast switching characteristics.

  5. What is the gate-source threshold voltage of FDD5N50NZFTM?

    • The gate-source threshold voltage of FDD5N50NZFTM is typically 4V.

  6. Is FDD5N50NZFTM suitable for use in power supplies?

    • Yes, FDD5N50NZFTM is suitable for use in power supplies and other related applications.

  7. Does FDD5N50NZFTM require a heat sink for proper operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of FDD5N50NZFTM.

  8. What is the maximum junction temperature of FDD5N50NZFTM?

    • The maximum junction temperature of FDD5N50NZFTM is 150°C.

  9. Can FDD5N50NZFTM be used in motor control applications?

    • Yes, FDD5N50NZFTM can be used in motor control applications due to its high voltage and current handling capabilities.

  10. Are there any recommended driver circuits for FDD5N50NZFTM?

    • Various MOSFET driver circuits are compatible with FDD5N50NZFTM, and the choice depends on the specific application requirements.