ON Semiconductor
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FDB088N08
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FDB088N08

Product Overview

Category

The FDB088N08 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The FDB088N08 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually sold in reels containing a specific quantity, such as 1000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 120A
  • On-Resistance (RDS(on)): 8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC

Detailed Pin Configuration

The FDB088N08 has a standard pin configuration with three pins: gate, drain, and source. The pinout is as follows: - Pin 1 (Gate) - Pin 2 (Drain) - Pin 3 (Source)

Functional Features

  • High voltage capability for robust performance
  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance leading to improved efficiency
  • Fast switching speed for rapid response in circuits

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability of package options

Working Principles

The FDB088N08 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow between the drain and source terminals.

Detailed Application Field Plans

The FDB088N08 is widely used in various applications, including: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models

Some alternative models to the FDB088N08 include: - IRF1405 - FDP8870 - IPP048N08N3

In conclusion, the FDB088N08 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací FDB088N08 v technických řešeních

  1. What is the maximum drain-source voltage of FDB088N08?

    • The maximum drain-source voltage of FDB088N08 is 80V.

  2. What is the continuous drain current rating of FDB088N08?

    • The continuous drain current rating of FDB088N08 is 120A.

  3. What is the on-resistance (RDS(on)) of FDB088N08 at a specific voltage and temperature?

    • The on-resistance (RDS(on)) of FDB088N08 varies with voltage and temperature. At 10V, it is typically 8.8mΩ at 25°C.

  4. Can FDB088N08 be used in automotive applications?

    • Yes, FDB088N08 is suitable for automotive applications.

  5. What is the typical gate charge of FDB088N08?

    • The typical gate charge of FDB088N08 is 60nC.

  6. Is FDB088N08 RoHS compliant?

    • Yes, FDB088N08 is RoHS compliant.

  7. What is the operating temperature range of FDB088N08?

    • The operating temperature range of FDB088N08 is -55°C to 175°C.

  8. Does FDB088N08 require a heat sink for certain applications?

    • Depending on the application and power dissipation, a heat sink may be required for FDB088N08.

  9. What are the recommended soldering conditions for FDB088N08?

    • The recommended soldering conditions for FDB088N08 include a peak temperature of 260°C for up to 10 seconds.

  10. Can FDB088N08 be used in high-frequency switching applications?

    • Yes, FDB088N08 can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.