CAV24C08YE-GT3

Product Overview

Category

The CAV24C08YE-GT3 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The CAV24C08YE-GT3 has a storage capacity of 8 kilobits (1 kilobyte).
• Low power consumption: It operates at low voltage and consumes minimal power.
• Fast access time: Provides quick access to stored data.

Package

The CAV24C08YE-GT3 comes in a small outline integrated circuit (SOIC) package. This package type ensures easy integration into various electronic systems.

Essence

The essence of the CAV24C08YE-GT3 lies in its ability to store and retrieve data reliably, making it an essential component for many electronic devices.

Packaging/Quantity

The chip is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 8 kilobits (1 kilobyte)
• Supply Voltage: 2.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Interface: I2C (Inter-Integrated Circuit)
• Write Cycle Time: 5 milliseconds (typical)

Detailed Pin Configuration

The CAV24C08YE-GT3 chip has a total of 8 pins, which are assigned specific functions as follows:

1. VCC: Power supply input
2. SDA: Serial data line for I2C communication
3. SCL: Serial clock line for I2C communication
4. WP: Write protect pin (optional)
5. A0: Address bit 0
6. A1: Address bit 1
7. GND: Ground connection
8. NC: No connection (unused pin)

Functional Features

• Random access: Allows reading and writing of specific memory locations.
• Byte-level operations: Supports individual byte read and write operations.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental modification.
• High reliability: The chip is designed to withstand harsh environmental conditions, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Electrically erasable and reprogrammable, allowing for flexibility in data management.
• Compact size and low power consumption make it suitable for various electronic devices.
• Fast access time enables quick retrieval of stored data.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively slower write cycle time may impact performance in certain applications.
• Vulnerable to electromagnetic interference (EMI) due to its small size.

Working Principles

The CAV24C08YE-GT3 utilizes electrically controlled floating gate transistors to store and retrieve data. When data is written, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charge is measured, allowing the retrieval of the stored data.

Detailed Application Field Plans

The CAV24C08YE-GT3 finds application in various fields, including but not limited to: - Automotive electronics: Used for storing vehicle configuration data, firmware updates, and sensor calibration information. - Industrial automation: Enables storage of critical parameters, configuration settings, and log data in programmable logic controllers (PLCs) and other industrial equipment. - Consumer electronics: Utilized in devices such as smart TVs, set-top boxes, and gaming consoles for storing user preferences, firmware, and application data.

Detailed and Complete Alternative Models

• CAV24C01YE-GT3: 1 kilobit (128 bytes) storage capacity
• CAV24C02YE-GT3: 2 kilobits (256 bytes) storage capacity
• CAV24C04YE-GT3: 4 kilobits (512 bytes) storage capacity
• CAV24C16YE-GT3: 16 kilobits (2 kilobytes) storage capacity

These alternative models offer different storage capacities to suit specific application requirements.

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