CAT28F001G-12T

Product Overview

Category

The CAT28F001G-12T belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The CAT28F001G-12T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 1 gigabit (128 megabytes).
• Fast access time: The device offers a fast access time of 120 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The CAT28F001G-12T is available in a compact surface-mount package.

Essence

The essence of the CAT28F001G-12T lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

The device is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 1 Gb (128 MB)
• Access Time: 120 ns
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Pin Configuration

The CAT28F001G-12T features a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A19: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Built-in error correction and detection mechanisms
• Low power consumption during standby mode
• Data protection features to prevent accidental modification

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even in the absence of power
• High storage capacity for accommodating large amounts of data
• Fast access time allows for quick retrieval of information
• Low power consumption makes it suitable for portable devices

Disadvantages

• Limited endurance: Flash memory cells have a finite number of erase/write cycles
• Relatively higher cost compared to other types of memory

Working Principles

The CAT28F001G-12T utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in floating gate transistors, allowing for non-volatile storage.

During write operations, the device applies a high voltage to the control gate, which enables the injection of charge into the floating gate. This process alters the threshold voltage of the transistor, representing the stored data.

Read operations involve applying appropriate voltages to the control gate and source/drain terminals, allowing the device to detect the threshold voltage and determine the stored data.

Detailed Application Field Plans

The CAT28F001G-12T is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems - Communication devices

Its high capacity, fast access time, and non-volatile nature make it suitable for applications that require reliable and long-term data storage.

Detailed and Complete Alternative Models

Some alternative models to the CAT28F001G-12T include: - CAT28F001G-15T: Similar specifications with a slightly slower access time of 150 ns. - CAT28F001G-10T: Similar specifications with a faster access time of 100 ns. - CAT28F001G-20T: Similar specifications with a slower access time of 200 ns.

These alternative models provide flexibility in choosing the appropriate device based on specific application requirements.

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