BC807-25LT1G

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Low power, high current gain, low voltage drop
Package: SOT-23
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Reel, 3000 units

Specifications

• Collector-Base Voltage (VCBO): 45V
• Collector-Emitter Voltage (VCEO): 45V
• Emitter-Base Voltage (VEBO): 5V
• Continuous Collector Current (IC): 500mA
• Power Dissipation (Ptot): 225mW
• Transition Frequency (fT): 100MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages and Disadvantages

Advantages: - Small package size - Suitable for high-density PCB designs - Low voltage drop

Disadvantages: - Limited power dissipation capability - Relatively low transition frequency

Working Principles

The BC807-25LT1G is an NPN bipolar junction transistor that operates by controlling the flow of current between its collector and emitter terminals using a small current at the base terminal. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter, enabling amplification and switching functions in electronic circuits.

Detailed Application Field Plans

The BC807-25LT1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its characteristics make it suitable for use in portable electronic devices, such as smartphones, tablets, and wearable technology.

Detailed and Complete Alternative Models

• BC807-25
• BC807-25LT1
• BC807-25LT1G
• BC807-25W

In conclusion, the BC807-25LT1G is a versatile NPN transistor with a range of applications in electronic circuits, offering high current gain and low voltage drop. Its compact package and characteristics make it suitable for various low-power amplification and switching tasks.

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