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BAS21AHT1G

BAS21AHT1G

Product Overview

Category: Semiconductor
Use: Rectifier diode
Characteristics: High-speed switching, low leakage current
Package: SOT-23
Essence: Small signal diode
Packaging/Quantity: Tape and reel

Specifications

  • Forward Voltage: 0.715V
  • Reverse Voltage: 250V
  • Forward Current: 200mA
  • Reverse Recovery Time: 4ns

Detailed Pin Configuration

The BAS21AHT1G has three pins in the SOT-23 package: anode, cathode, and gate.

Functional Features

  • High-speed switching capability
  • Low leakage current
  • Small form factor

Advantages and Disadvantages

Advantages: - Fast switching speed - Low reverse leakage current - Small package size

Disadvantages: - Limited maximum forward current - Higher forward voltage compared to some alternatives

Working Principles

The BAS21AHT1G operates as a rectifier diode, allowing current to flow in one direction while blocking it in the opposite direction. Its high-speed switching capability makes it suitable for applications requiring rapid transitions between conducting and non-conducting states.

Detailed Application Field Plans

The BAS21AHT1G is commonly used in: - Switching power supplies - Signal demodulation circuits - High-frequency rectification applications

Detailed and Complete Alternative Models

  • BAS21: Similar characteristics, different package (SOD-123)
  • BAV21: Lower forward voltage, higher reverse voltage

This comprehensive entry provides detailed information about the BAS21AHT1G, including its product category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BAS21AHT1G v technických řešeních

  1. What is BAS21AHT1G?

    • BAS21AHT1G is a dual surface mount switching diode commonly used in electronic circuits for signal processing and switching applications.
  2. What are the key features of BAS21AHT1G?

    • BAS21AHT1G features high-speed switching, low leakage current, and small package size, making it suitable for compact and efficient technical solutions.
  3. What are the typical applications of BAS21AHT1G?

    • BAS21AHT1G is commonly used in voltage clamping, high-speed switching, and general-purpose diode applications in various technical solutions.
  4. What are the electrical characteristics of BAS21AHT1G?

    • The electrical characteristics include a maximum repetitive peak reverse voltage of 250V, forward continuous current of 200mA, and a forward voltage drop of around 0.715V at 10mA.
  5. How does BAS21AHT1G compare to other similar diodes?

    • Compared to other diodes, BAS21AHT1G offers a balance of high-speed performance, low leakage current, and small form factor, making it suitable for a wide range of technical solutions.
  6. What are the recommended operating conditions for BAS21AHT1G?

    • It is recommended to operate BAS21AHT1G within a temperature range of -65°C to +150°C and to keep the junction temperature below 150°C to ensure optimal performance and reliability.
  7. Can BAS21AHT1G be used in high-frequency applications?

    • Yes, BAS21AHT1G is suitable for high-frequency applications due to its high-speed switching capabilities and low parasitic capacitance.
  8. Are there any specific layout considerations when using BAS21AHT1G in a circuit?

    • It is important to minimize lead lengths and keep the diode close to the components it interacts with to reduce parasitic effects and optimize performance.
  9. What are the packaging options available for BAS21AHT1G?

    • BAS21AHT1G is available in a variety of surface mount packages, including SOT-23 and SOD-323, offering flexibility for different design requirements.
  10. Where can I find detailed application notes and guidelines for using BAS21AHT1G in technical solutions?

    • Detailed application notes and guidelines for BAS21AHT1G can be found in the product datasheet provided by the manufacturer, as well as in technical resources from semiconductor component distributors and industry publications.