2SC5566-TD-E Encyclopedia Entry

Product Overview

The 2SC5566-TD-E belongs to the category of semiconductor devices and is specifically a high-frequency amplifier transistor. It is commonly used in electronic circuits for amplification purposes, especially in radio frequency (RF) applications. The 2SC5566-TD-E is known for its high gain, low noise, and excellent linearity characteristics. It is typically packaged in a small form factor, such as a SOT-89 package, and is available in tape and reel packaging with a specific quantity per reel.

Specifications

• Type: NPN
• Maximum Power Dissipation (Pd): 0.5 W
• Collector-Base Voltage (VCBO): 20 V
• Collector Current (IC): 100 mA
• Transition Frequency (fT): 7 GHz
• Noise Figure (NF): 1.3 dB

Pin Configuration

The 2SC5566-TD-E has three pins: the collector (C), base (B), and emitter (E). The pin configuration is as follows: - Collector (C): Pin 1 - Base (B): Pin 2 - Emitter (E): Pin 3

Functional Features

The 2SC5566-TD-E offers high gain, low noise, and excellent linearity, making it suitable for RF amplifier applications. Its compact package and low power dissipation make it ideal for use in space-constrained electronic designs.

Advantages and Disadvantages

Advantages

• High gain
• Low noise figure
• Compact package
• Low power dissipation

Disadvantages

• Limited maximum power dissipation
• Restricted collector-base voltage

Working Principles

The 2SC5566-TD-E operates based on the principles of bipolar junction transistors (BJTs). When biased and connected in an appropriate circuit, it amplifies small input signals at radio frequencies to produce larger output signals with minimal distortion and noise.

Application Field Plans

The 2SC5566-TD-E finds extensive use in RF amplifier circuits, including but not limited to: - Radio communication systems - Wireless data transmission - Radar systems - RF test equipment

Alternative Models

For applications requiring similar functionality, alternative models to the 2SC5566-TD-E include: - 2SC3356 - 2SC3320 - 2SC3358 - 2SC3357

In conclusion, the 2SC5566-TD-E is a versatile high-frequency amplifier transistor with excellent characteristics, making it a preferred choice for various RF applications.

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