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2SC3646T-P-TD-E

2SC3646T-P-TD-E

Product Overview

Category:

The 2SC3646T-P-TD-E belongs to the category of semiconductor transistors.

Use:

It is commonly used as an amplifier or switch in electronic circuits.

Characteristics:

  • High voltage capability
  • Low collector saturation voltage
  • Fast switching speed

Package:

The 2SC3646T-P-TD-E is typically available in a TO-126 package.

Essence:

This transistor is essential for amplifying and controlling electrical signals in various electronic devices.

Packaging/Quantity:

The 2SC3646T-P-TD-E is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Base Voltage (VCBO): 400V
  • Collector-Emitter Voltage (VCEO): 230V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 1A
  • Power Dissipation (PD): 1.5W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The 2SC3646T-P-TD-E has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in various applications.
  • Low collector saturation voltage ensures efficient operation.
  • Fast switching speed enables quick response in electronic circuits.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low collector saturation voltage
  • Fast switching speed

Disadvantages

  • Limited power dissipation capacity
  • Relatively low transition frequency

Working Principles

The 2SC3646T-P-TD-E operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal, allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

The 2SC3646T-P-TD-E is commonly used in the following applications: - Audio amplifiers - Switching circuits - Power supply control

Detailed and Complete Alternative Models

Some alternative models to the 2SC3646T-P-TD-E include: - 2N3904 - BC547 - 2N2222

In conclusion, the 2SC3646T-P-TD-E is a versatile semiconductor transistor with high voltage capability, suitable for various amplification and switching applications in electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2SC3646T-P-TD-E v technických řešeních

  1. What is the maximum collector current of 2SC3646T-P-TD-E?

    • The maximum collector current of 2SC3646T-P-TD-E is 1.5A.

  2. What is the maximum collector-emitter voltage of 2SC3646T-P-TD-E?

    • The maximum collector-emitter voltage of 2SC3646T-P-TD-E is 160V.

  3. What is the power dissipation of 2SC3646T-P-TD-E?

    • The power dissipation of 2SC3646T-P-TD-E is 0.9W.

  4. What are the typical applications of 2SC3646T-P-TD-E?

    • Typical applications include audio amplification, driver stages in high-frequency amplifiers, and general-purpose switching.

  5. What is the gain bandwidth product of 2SC3646T-P-TD-E?

    • The gain bandwidth product of 2SC3646T-P-TD-E is approximately 100MHz.

  6. Is 2SC3646T-P-TD-E suitable for use in low-noise amplifiers?

    • Yes, 2SC3646T-P-TD-E can be used in low-noise amplifiers due to its low noise figure.

  7. What is the operating temperature range of 2SC3646T-P-TD-E?

    • The operating temperature range of 2SC3646T-P-TD-E is -55°C to 150°C.

  8. Does 2SC3646T-P-TD-E require external biasing?

    • Yes, 2SC3646T-P-TD-E requires external biasing for proper operation.

  9. Can 2SC3646T-P-TD-E be used in high-frequency applications?

    • Yes, 2SC3646T-P-TD-E is suitable for use in high-frequency applications due to its high transition frequency.

  10. What are the recommended alternative components to 2SC3646T-P-TD-E?

    • Some recommended alternative components include 2SC2712, 2SC3356, and 2SC3326, depending on specific application requirements.