ON Semiconductor
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2SC3646S-P-TD-E

2SC3646S-P-TD-E

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High voltage, high current, low power consumption - Package: SOT-89 package - Essence: Small signal NPN transistor - Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications: - Collector-Base Voltage (VCBO): 120V - Collector-Emitter Voltage (VCEO): 120V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 400mW - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High voltage capability - Low saturation voltage - Fast switching speed - Low noise

Advantages: - Suitable for high-speed switching applications - Compact SOT-89 package - Wide operating temperature range

Disadvantages: - Limited maximum collector current compared to some alternatives - Relatively lower transition frequency

Working Principles: The 2SC3646S-P-TD-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Switching circuits - Signal amplification in communication systems - Power management in portable devices

Detailed and Complete Alternative Models: - 2SC2712 - 2SC3356 - 2SC458 - 2SC536F

This comprehensive entry provides an in-depth understanding of the 2SC3646S-P-TD-E transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2SC3646S-P-TD-E v technických řešeních

  1. What is the maximum collector current of 2SC3646S-P-TD-E?

    • The maximum collector current of 2SC3646S-P-TD-E is 1.5A.

  2. What is the typical hFE (DC current gain) of 2SC3646S-P-TD-E?

    • The typical hFE of 2SC3646S-P-TD-E is 120-240.

  3. What is the maximum power dissipation of 2SC3646S-P-TD-E?

    • The maximum power dissipation of 2SC3646S-P-TD-E is 0.9W.

  4. What is the voltage rating for 2SC3646S-P-TD-E?

    • The voltage rating for 2SC3646S-P-TD-E is 50V.

  5. What are the typical applications for 2SC3646S-P-TD-E?

    • Typical applications for 2SC3646S-P-TD-E include audio amplification, switching circuits, and general purpose amplification.

  6. What is the operating temperature range of 2SC3646S-P-TD-E?

    • The operating temperature range of 2SC3646S-P-TD-E is -55°C to 150°C.

  7. Is 2SC3646S-P-TD-E RoHS compliant?

    • Yes, 2SC3646S-P-TD-E is RoHS compliant.

  8. What is the package type of 2SC3646S-P-TD-E?

    • 2SC3646S-P-TD-E comes in a TO-126 package.

  9. Does 2SC3646S-P-TD-E require external heat sinking?

    • It is recommended to use external heat sinking for 2SC3646S-P-TD-E in high-power applications.

  10. What are the key differences between 2SC3646S-P-TD-E and its previous versions?

    • The main differences include improved thermal characteristics and higher collector current capability in 2SC3646S-P-TD-E compared to its previous versions.