2N7002W

Product Overview

Category

The 2N7002W is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the semiconductor components category.

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

• Low threshold voltage
• Low on-resistance
• Fast switching speed
• Small package size

Package

The 2N7002W is typically available in a SOT-323 surface-mount package.

Packaging/Quantity

It is often supplied in reels or tape and reel packaging, with quantities varying based on manufacturer and distributor specifications.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 115mA
• Total Power Dissipation (PD): 200mW
• Threshold Voltage (VGS(th)): 1.0V - 2.5V
• On-Resistance (RDS(on)): 5Ω - 7Ω
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N7002W typically has three pins: 1. Gate (G): Controls the conductivity between the source and drain terminals. 2. Drain (D): Connects to the positive supply voltage in most applications. 3. Source (S): Connects to the ground or common reference point.

Functional Features

The 2N7002W offers: - Low threshold voltage for improved control in low-voltage applications. - Fast switching speed for efficient operation in high-frequency circuits. - Low on-resistance for minimal power dissipation and heat generation.

Advantages and Disadvantages

Advantages

• Small package size allows for space-efficient circuit designs.
• Low threshold voltage enables compatibility with low-voltage systems.
• Fast switching speed enhances overall circuit performance.

Disadvantages

• Limited maximum drain-source voltage compared to some other MOSFETs.
• Relatively low continuous drain current rating may restrict use in high-power applications.

Working Principles

When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the source and drain terminals. This mechanism allows the 2N7002W to act as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

The 2N7002W finds application in various fields, including: - Low-power switching circuits - Signal amplification stages - Battery-powered devices - Portable electronics

Detailed and Complete Alternative Models

Some alternative models to the 2N7002W include: - BS170 - IRF530 - FQP30N06L - NDP6020P

In conclusion, the 2N7002W is a versatile N-channel MOSFET with characteristics suitable for a wide range of electronic applications, particularly those requiring low-voltage operation and space-efficient design.

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