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2N7000BU_T
Product Overview
The 2N7000BU_T is a small-signal N-channel MOSFET transistor. It falls under the category of electronic components and is commonly used in various electronic circuits for switching and amplification purposes. The transistor exhibits characteristics such as low power consumption, high switching speed, and compatibility with a wide range of voltage levels. It is typically packaged in a TO-92 package and is available in tape and reel packaging with varying quantities.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 200mA
- Power Dissipation (PD): 350mW
- Threshold Voltage (VGS(th)): 1-2V
- On-State Resistance (RDS(on)): 5Ω
Detailed Pin Configuration
The 2N7000BU_T features three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - Gate (G): Pin 1 - Drain (D): Pin 2 - Source (S): Pin 3
Functional Features
The transistor offers low on-state resistance, making it suitable for low-power applications. It also provides fast switching capabilities, enabling efficient control of electronic signals. Additionally, it exhibits high input impedance, allowing for easy interfacing with other electronic components.
Advantages and Disadvantages
Advantages: - Low power consumption - High switching speed - Wide voltage compatibility
Disadvantages: - Limited maximum drain-source voltage - Sensitivity to static discharge
Working Principles
The 2N7000BU_T operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. By modulating the gate-source voltage, the transistor can effectively switch and amplify electronic signals within a circuit.
Detailed Application Field Plans
The 2N7000BU_T finds extensive use in various electronic applications, including but not limited to: - Switching circuits - Amplification circuits - Signal level shifting - LED driver circuits - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the 2N7000BU_T include: - BS170 - IRF530 - FQP30N06L - NDP6020P
In conclusion, the 2N7000BU_T serves as a versatile and reliable component in electronic circuits, offering efficient signal control and amplification capabilities while catering to a wide range of applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N7000BU_T v technických řešeních
What is the maximum drain-source voltage of 2N7000BU_T?
- The maximum drain-source voltage of 2N7000BU_T is 60V.
What is the continuous drain current rating of 2N7000BU_T?
- The continuous drain current rating of 2N7000BU_T is 200mA.
Can 2N7000BU_T be used for low-power switching applications?
- Yes, 2N7000BU_T is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage of 2N7000BU_T?
- The typical threshold voltage of 2N7000BU_T is around 2.1V.
Is 2N7000BU_T suitable for level shifting applications?
- Yes, 2N7000BU_T can be used for level shifting due to its low threshold voltage and compatibility with logic level signals.
What are the typical applications of 2N7000BU_T in technical solutions?
- Typical applications include small signal switching, amplification, level shifting, and interface circuits.
Does 2N7000BU_T require a heat sink for normal operation?
- No, 2N7000BU_T typically does not require a heat sink for normal operation due to its low power dissipation.
What is the maximum junction temperature of 2N7000BU_T?
- The maximum junction temperature of 2N7000BU_T is 150°C.
Can 2N7000BU_T be used in battery-powered applications?
- Yes, 2N7000BU_T is suitable for battery-powered applications due to its low threshold voltage and low power consumption.
Is 2N7000BU_T RoHS compliant?
- Yes, 2N7000BU_T is RoHS compliant, making it suitable for use in environmentally sensitive applications.