PSMN5R6-100YSFQ

Product Overview

Category: Power MOSFET
Use: High-efficiency power management
Characteristics: Low on-state resistance, high switching speed
Package: TO-220, TO-220FP, D2PAK, I2PAK
Essence: Efficient power handling for various applications
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 38A
• RDS(ON): 5.6mΩ
• Gate Charge: 28nC
• Operating Temperature: -55°C to 175°C
• Mounting Type: Through Hole

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-state resistance for minimal power dissipation
• High switching speed for efficient power management
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High efficiency in power management - Suitable for high-frequency applications - Enhanced thermal performance

Disadvantages: - Sensitive to voltage spikes - Requires careful ESD handling

Working Principles

The PSMN5R6-100YSFQ operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, it allows the MOSFET to conduct current with low resistance, enabling efficient power management.

Detailed Application Field Plans

1. Switched-Mode Power Supplies: Utilized for high-efficiency power conversion.
2. Motor Control: Enables precise control of motor speed and direction.
3. LED Lighting: Facilitates efficient driving of LED arrays.

Detailed and Complete Alternative Models

1. PSMN4R6-100YSFQ: Lower RDS(ON) for higher efficiency.
2. PSMN6R0-100YSFQ: Higher current rating for increased power handling.
3. PSMN5R6-080YSFQ: Lower voltage rating for specific applications.

This comprehensive entry provides an in-depth understanding of the PSMN5R6-100YSFQ, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.