Nexperia USA Inc.
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PBSS8510PA,115
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PBSS8510PA,115

Product Overview

Category: Semiconductor
Use: Power Switching
Characteristics: High efficiency, low power consumption
Package: SOT1061 (SC-74)
Essence: NPN Resistor-Equipped Transistor (RET)
Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Current - Collector (Ic) (Max): 3A
  • Rds On (Max): 110mOhm
  • Vce(sat) (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C

Detailed Pin Configuration

  1. Base
  2. Emitter
  3. Collector

Functional Features

  • Low collector-emitter saturation voltage
  • High current capability
  • Fast switching speed

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Fast switching speed

Disadvantages: - Limited maximum voltage and current ratings

Working Principles

The PBSS8510PA,115 is designed to efficiently switch high currents with minimal power loss. It utilizes a NPN Resistor-Equipped Transistor (RET) configuration to achieve high performance in power switching applications.

Detailed Application Field Plans

The PBSS8510PA,115 is suitable for a wide range of applications including: - DC-DC converters - Motor control - LED lighting - Power management systems

Detailed and Complete Alternative Models

  • PBSS4350PA,115
  • PBSS5350PA,115
  • PBSS6350PA,115

This completes the entry for PBSS8510PA,115 in the English editing encyclopedia format.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PBSS8510PA,115 v technických řešeních

  1. What is PBSS8510PA,115?

    • PBSS8510PA,115 is a NPN low VCEsat (BISS) transistor in a SOT1061 (SC-74A) small Surface-Mounted Device (SMD) plastic package.

  2. What are the key features of PBSS8510PA,115?

    • The key features include low collector-emitter saturation voltage (VCEsat), high current gain (hFE), and a small SMD plastic package.

  3. What are the typical applications of PBSS8510PA,115?

    • Typical applications include power management in portable equipment, battery-powered devices, and general-purpose switching and amplification.

  4. What is the maximum collector current (IC) of PBSS8510PA,115?

    • The maximum collector current (IC) is 1 A.

  5. What is the maximum collector-emitter voltage (VCEO) of PBSS8510PA,115?

    • The maximum collector-emitter voltage (VCEO) is 100 V.

  6. What is the typical collector-emitter saturation voltage (VCEsat) of PBSS8510PA,115?

    • The typical collector-emitter saturation voltage (VCEsat) is 250 mV at 500 mA.

  7. What is the thermal resistance junction to ambient (RthJA) of PBSS8510PA,115?

    • The thermal resistance junction to ambient (RthJA) is 300 K/W.

  8. What are the storage and operating temperature ranges for PBSS8510PA,115?

    • The storage temperature range is -65°C to +150°C, and the operating temperature range is -55°C to +150°C.

  9. Does PBSS8510PA,115 require any special handling or precautions during assembly?

    • It is recommended to follow standard ESD (Electrostatic Discharge) handling procedures during assembly to prevent damage to the device.

  10. Where can I find detailed technical specifications and application notes for PBSS8510PA,115?

    • Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer or distributor.