PBSS5320D,115

Product Overview

Category: Transistor
Use: Switching applications
Characteristics: High current capability, low VCE(sat)
Package: SOT457 (SC-74)
Essence: NPN Resistor-Equipped Transistor (RET)
Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

Collector-emitter voltage: 32 V
Collector current: 3 A
Power dissipation: 1.25 W
DC current gain: 100 to 400
Transition frequency: 100 MHz

Detailed Pin Configuration

The PBSS5320D,115 has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

Low collector-emitter saturation voltage
High current gain
Fast switching speed

Advantages and Disadvantages

Advantages: - Low VCE(sat) reduces power dissipation - High current capability allows for use in various applications - Fast switching speed enhances efficiency

Disadvantages: - Limited maximum collector-emitter voltage - Sensitivity to overcurrent conditions

Working Principles

The PBSS5320D,115 operates as a switch, controlling the flow of current between the collector and emitter based on the base current input.

Detailed Application Field Plans

This transistor is suitable for a wide range of applications including: - Power management systems - Battery management - LED lighting - Motor control - Portable electronics

Detailed and Complete Alternative Models

PBSS5320D,115R - Reversed pin configuration
PBSS5320D,116 - Higher collector current rating
PBSS5320D,114 - Lower transition frequency

Note: The alternative models listed above are not exhaustive and may vary based on manufacturer.

This entry provides comprehensive information about the PBSS5320D,115 transistor, covering its basic details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací PBSS5320D,115 v technických řešeních

What is PBSS5320D,115?
- PBSS5320D,115 is a high-performance NPN bipolar junction transistor (BJT) designed for use in various technical solutions.
What are the key features of PBSS5320D,115?
- The key features of PBSS5320D,115 include high current capability, low VCE(sat), and low collector-emitter saturation voltage.
In what technical solutions can PBSS5320D,115 be used?
- PBSS5320D,115 can be used in applications such as power management, motor control, and general-purpose switching.
What is the maximum collector current rating of PBSS5320D,115?
- The maximum collector current rating of PBSS5320D,115 is typically 3A.
What is the typical collector-emitter saturation voltage of PBSS5320D,115?
- The typical collector-emitter saturation voltage of PBSS5320D,115 is around 300mV at a collector current of 1A.
Does PBSS5320D,115 require any external components for operation?
- PBSS5320D,115 may require external resistors, capacitors, and other components depending on the specific application and circuit design.
What is the operating temperature range of PBSS5320D,115?
- The operating temperature range of PBSS5320D,115 is typically -55°C to 150°C.
Can PBSS5320D,115 be used in automotive applications?
- Yes, PBSS5320D,115 is suitable for use in automotive applications where its high current capability and low saturation voltage can be beneficial.
Are there any recommended alternative components to PBSS5320D,115?
- Some recommended alternative components to PBSS5320D,115 include similar NPN transistors with comparable specifications from other manufacturers.
Where can I find detailed technical specifications and application notes for PBSS5320D,115?
- Detailed technical specifications and application notes for PBSS5320D,115 can be found in the product datasheet provided by the manufacturer or distributor.