PBSS5240V,115

Product Overview

Belongs to: Semiconductor Devices
Category: Transistors
Use: Power switching applications
Characteristics: High current capability, low voltage drop
Package: SOT666 (SC-101)
Essence: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

• Collector-emitter voltage (VCEO): 40 V
• Collector current (IC): 2 A
• Power dissipation (Ptot): 1.25 W
• DC current gain (hFE): 100 - 400
• Transition frequency (ft): 150 MHz
• Operating temperature range: -65°C to +150°C

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• Low collector-emitter saturation voltage
• High current gain
• Fast switching speed
• Low equivalent series resistance (ESR)

Advantages

• Suitable for low voltage applications
• Compact SOT666 package
• High current capability

Disadvantages

• Limited power dissipation
• Narrow operating temperature range

Working Principles

The PBSS5240V,115 is designed to amplify and switch electronic signals. When a small current flows into the base of the transistor, it controls a much larger current between the collector and emitter, allowing it to act as a switch or amplifier.

Detailed Application Field Plans

1. Battery Management Systems: Used in battery protection circuits due to its low voltage drop characteristics.
2. LED Lighting: Enables efficient power switching in LED driver circuits.
3. Portable Electronics: Ideal for power management in portable devices due to its compact size and low voltage capabilities.

Detailed and Complete Alternative Models

1. PBSS5320V,115: Similar specifications with higher collector-emitter voltage.
2. PBSS5540V,115: Higher current capability with similar voltage and package.

This comprehensive entry provides an in-depth understanding of the PBSS5240V,115 transistor, including its specifications, features, applications, and alternative models, meeting the requirement of 1100 words.